FSDH321, FSDL321

5

Electrical Characteristics

(Ta = 25

°C unless otherwise specified)

Note:

1. Pulse test: Pulse width ≤ 300us, duty ≤ 2%

2. These parameters, although guaranteed, are tested in EDS (wafer test) process

3. These parameters, although guaranteed, are not 100% tested in production

Parameter

Symbol

Condition

Min.

Typ.

Max.

Unit

SENSE FET SECTION

Zero-Gate-Voltage Drain Current

-

-

25

µA

-

-

200

Drain-Source On-State Resistance

-

14

19

Ω

1.0

1.3

-

S

Input Capacitance

f=1MHz

-

162

-

pF

Output Capacitance

-18-

Reverse Transfer Capacitance

-3.8

-

Turn-On Delay Time

-9.5

-

ns

Rise Time

-19-

Turn-Off Delay Time

-33-

Fall Time

-

42

-

Total Gate Charge

-7.0

-

nC

Gate-Source Charge

-3.1

-

Gate-Drain (Miller) Charge

-0.4

-

CONTROL SECTION

Switching Frequency

FSDH321

90

100

110

KHz

Switching Frequency Modulation

±2.5

±3.0

±3.5

KHz

Switching Frequency

FSDL321

45

50

55

KHz

Switching Frequency Modulation

±1.0

±1.5

±2.0

KHz

-25

°C ≤ Ta ≤ 85°C

-

±5

±10

%

Maximum Duty Cycle

FSDH321

62

67

72

%

FSDL321

71

77

83

%

UVLO Threshold Voltage

11

12

13

V

7

8

9

V

Feedback Source Current

0.7

0.9

1.1

mA

Internal Soft Start Time

10

15

20

ms

BURST MODE SECTION

Burst Mode Voltage

Tj=25

°C

0.4

0.5

0.6

V

0.25

0.35

0.45

V

-

150

-

mV

PROTECTION SECTION

Peak Current Limit

Tj=25

°C, ∆i/∆t=250mA/us 0.60

0.70

0.80

A

Tj=25

°C

-

600

-

ns

125

145

-

°C

Shutdown Feedback Voltage

5.5

6.0

6.5

V

Over Voltage Protection

18

19

20

V

Shutdown Delay Current

3.5

5.0

6.5

µA

Leading Edge Blanking Time

200

-

-

ns

TOTAL DEVICE SECTION

1

3

5

mA

Start-Up Charging Current

0.7

0.85

1.0

mA

Vstr Supply Voltage

35

-

-

V