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EM39LV80070M Datasheet(PDF) 1 Page - ELAN Microelectronics Corp |
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EM39LV80070M Datasheet(HTML) 1 Page - ELAN Microelectronics Corp |
1 / 25 page EM39LV800 8M Bits (512Kx16) Flash Memory SPECIFICATION This specification is subject to change without further notice. (04.09.2004 V1.0) Page 1 of 25 General Description The EM39LV800 is an 8M bits Flash memory organized as 512K x 16 bits. The EM39LV800 uses 2.7-3.6V power supply for Program and Erase. Featuring high performance Flash memory technology, the EM39LV800 provides a typical Word-Program time of 14 µsec and a typical Sector/Block-Erase time of 18 ms. The device uses Toggle Bit or Data# Polling to detect the completion of the Program or Erase operation. To protect against inadvertent write, the device has on-chip hardware and software data protection schemes. The device offers typical 100,000 cycles endurance and a greater than 10 years data retention. The EM39LV800 conforms with the JEDEC standard pin outs for x16 memories. The EM39LV800 is offered in package types of 48-ball FBGA, 48-pin TSOP, and known good dice (KGD). For KGD, please contact ELAN Microelectronics or its representatives for detailed information (see Appendix at the bottom of this specification for Ordering Information). The EM39LV800 devices are developed for applications that require memories with convenient and economical updating of program, data or configuration, e.g., DVD player, DVD R/W, WLAN, Router, Set-Top Box, etc. Features Single Power Supply Full voltage range from 2.7 to 3.6 volts for both read and write operations Sector-Erase Capability Uniform 2Kword sectors Block-Erase Capability Uniform 32Kword blocks Read Access Time Access time: 55, 70 and 90 ns Power Consumption Active current: 20 mA (Typical) Standby current: 2 µA (Typical) Erase/Program Features Sector-Erase Time: 18 ms (Typical) Block-Erase Time: 18 ms (Typical) Chip-Erase Time: 45 ms (Typical) Word-Program Time: 14 µs (Typical) Chip Rewrite Time: 8 seconds (Typical) Automatic Write Timing Internal VPP Generation End-of-Program or End-of-Erase Detection Data# Polling Toggle Bit CMOS I/O Compatibility JEDEC Standard Pin-out and software command sets compatible with single-power supply Flash memory High Reliability Endurance cycles: 100K (Typical) Data retention: 10 years Package Option 48-pin TSOP 48-pin FBGA |
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