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IRHMS57264SE Datasheet(PDF) 2 Page - International Rectifier

Part # IRHMS57264SE
Description  RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) 250V, N-CHANNEL
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRHMS57264SE Datasheet(HTML) 2 Page - International Rectifier

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IRHMS57264SE, JANSR2N7477T1
Pre-Irradiation
2
www.irf.com
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
RthJC
Junction-to-Case
0.60
RthCS
Case-to-Sink
— 0.21
°C/W
RthJA
Junction-to-Ambient
48
Typical socket mount
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS
Continuous Source Current (Body Diode)
37
ISM
Pulse Source Current (Body Diode)
À
148
VSD Diode Forward Voltage
1.2
V
Tj = 25°C, IS = 37A, VGS = 0V Ã
trr
Reverse Recovery Time
560
ns
Tj = 25°C, IF = 37A, di/dt ≤100A/µs
QRR Reverse Recovery Charge
8.2
µCVDD ≤ 50V Ã
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
250
V
VGS = 0V, ID = 1.0mA
∆BVDSS/∆TJ Temperature Coefficient of Breakdown —
0.29
V/°C
Reference to 25°C, ID = 1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
0.061
VGS = 12V, ID = 23.5A
Resistance
VGS(th)
Gate Threshold Voltage
2.5
4.5
V
VDS = VGS, ID = 1.0mA
gfs
Forward Transconductance
27
S ( )VDS = 15V, IDS = 23.5A Ã
IDSS
Zero Gate Voltage Drain Current
10
VDS= 200V ,VGS=0V
——
25
VDS = 200V,
VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Leakage Forward
100
VGS = 20V
IGSS
Gate-to-Source Leakage Reverse
-100
VGS = -20V
Qg
Total Gate Charge
165
VGS =12V, ID = 37A
Qgs
Gate-to-Source Charge
45
nC
VDS = 125V
Qgd
Gate-to-Drain (‘Miller’) Charge
75
td(on)
Turn-On Delay Time
35
VDD = 125V, ID = 37A
tr
Rise Time
125
VGS =12V, RG = 2.35Ω
td(off)
Turn-Off Delay Time
80
tf
Fall Time
65
LS + LD
Total Inductance
6.8
Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in.
from package) with Source wires internally
bonded from Source Pin to Drain Pad
Ciss
Input Capacitance
5410
VGS = 0V, VDS = 25V
Coss
Output Capacitance
770
pF
f = 1.0MHz
Crss
Reverse Transfer Capacitance
36
Rg
Internal Gate Resistance
1.2
f = 1.0MHz, open drain
nA
Ã
nH
ns
µA


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