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IRHMS57264SE Datasheet(PDF) 2 Page - International Rectifier |
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IRHMS57264SE Datasheet(HTML) 2 Page - International Rectifier |
2 / 8 page IRHMS57264SE, JANSR2N7477T1 Pre-Irradiation 2 www.irf.com Note: Corresponding Spice and Saber models are available on International Rectifier Web site. For footnotes refer to the last page Thermal Resistance Parameter Min Typ Max Units Test Conditions RthJC Junction-to-Case — — 0.60 RthCS Case-to-Sink — 0.21 — °C/W RthJA Junction-to-Ambient — — 48 Typical socket mount Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units Test Conditions IS Continuous Source Current (Body Diode) — — 37 ISM Pulse Source Current (Body Diode) À — — 148 VSD Diode Forward Voltage — — 1.2 V Tj = 25°C, IS = 37A, VGS = 0V Ã trr Reverse Recovery Time — — 560 ns Tj = 25°C, IF = 37A, di/dt ≤100A/µs QRR Reverse Recovery Charge — — 8.2 µCVDD ≤ 50V Ã ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. A Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BVDSS Drain-to-Source Breakdown Voltage 250 — — V VGS = 0V, ID = 1.0mA ∆BVDSS/∆TJ Temperature Coefficient of Breakdown — 0.29 — V/°C Reference to 25°C, ID = 1.0mA Voltage RDS(on) Static Drain-to-Source On-State — — 0.061 Ω VGS = 12V, ID = 23.5A Resistance VGS(th) Gate Threshold Voltage 2.5 — 4.5 V VDS = VGS, ID = 1.0mA gfs Forward Transconductance 27 — — S ( )VDS = 15V, IDS = 23.5A Ã IDSS Zero Gate Voltage Drain Current — — 10 VDS= 200V ,VGS=0V —— 25 VDS = 200V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Leakage Forward — — 100 VGS = 20V IGSS Gate-to-Source Leakage Reverse — — -100 VGS = -20V Qg Total Gate Charge — — 165 VGS =12V, ID = 37A Qgs Gate-to-Source Charge — — 45 nC VDS = 125V Qgd Gate-to-Drain (‘Miller’) Charge — — 75 td(on) Turn-On Delay Time — — 35 VDD = 125V, ID = 37A tr Rise Time — — 125 VGS =12V, RG = 2.35Ω td(off) Turn-Off Delay Time — — 80 tf Fall Time — — 65 LS + LD Total Inductance — 6.8 — Measured from Drain lead (6mm /0.25in. from package) to Source lead (6mm /0.25in. from package) with Source wires internally bonded from Source Pin to Drain Pad Ciss Input Capacitance — 5410 — VGS = 0V, VDS = 25V Coss Output Capacitance — 770 — pF f = 1.0MHz Crss Reverse Transfer Capacitance — 36 — Rg Internal Gate Resistance — 1.2 — Ω f = 1.0MHz, open drain nA Ã nH ns µA |
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