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K4S280832B-TCL80 Datasheet(PDF) 8 Page - Samsung semiconductor

Part # K4S280832B-TCL80
Description  4M x 8Bit x 4 Banks Sychronous DRAM
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K4S280832B-TCL80 Datasheet(HTML) 8 Page - Samsung semiconductor

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K4S280832B
CMOS SDRAM
Rev. 0.0 Aug. 1999
IOH Characteristics (Pull-up)
Voltage
100MHz
Min
100MHz
Max
66MHz
Min
(V)
I (mA)
I (mA)
I (mA)
3.45
-2.4
3.3
-27.3
3.0
0.0
-74.1
-0.7
2.6
-21.1
-129.2
-7.5
2.4
-34.1
-153.3
-13.3
2.0
-58.7
-197.0
-27.5
1.8
-67.3
-226.2
-35.5
1.65
-73.0
-248.0
-41.1
1.5
-77.9
-269.7
-47.9
1.4
-80.8
-284.3
-52.4
1.0
-88.6
-344.5
-72.5
0.0
-93.0
-502.4
-93.0
IBIS SPECIFICATION
IOL Characteristics (Pull-down)
Voltage
100MHz
Min
100MHz
Max
66MHz
Min
(V)
I (mA)
I (mA)
I (mA)
0.0
0.0
0.0
0.0
0.4
27.5
70.2
17.7
0.65
41.8
107.5
26.9
0.85
51.6
133.8
33.3
1.0
58.0
151.2
37.6
1.4
70.7
187.7
46.6
1.5
72.9
194.4
48.0
1.65
75.4
202.5
49.5
1.8
77.0
208.6
50.7
1.95
77.6
212.0
51.5
3.0
80.3
219.6
54.2
3.45
81.4
222.6
54.9
0
-100
-200
-300
-400
-500
-600
0
3
0.5
1
1.5
2
2.5
3.5
Voltage
250
200
150
100
50
0
0
3
0.5
1
1.5
2
2.5
3.5
Voltage
66MHz and 100MHz Pull-up
66MHz and 100MHz Pull-down
IOH Min (100MHz)
IOH Max (66 and 100MHz)
IOH Min (66MHz)
IOL Min (100MHz)
IOL Max (100MHz)
IOL Min (66MHz)


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