IKP03N120H2,

IKB03N120H2

IKW03N120H2

Power Semiconductors

1

Rev. 2, Mar-04

HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode

•

Designed for:

- SMPS

- Lamp Ballast

- ZVS-Converter

•

2

for 1200V applications offers:

- loss reduction in resonant circuits

- temperature stable behavior

- parallel switching capability

- tight parameter distribution

Type

Package

Ordering Code

IKW03N120H2

1200V

3A

0.15mJ

150

°C

P-TO-247

Q67040-S4595

IKP03N120H2

1200V

3A

0.15mJ

150°C

P-TO-220-3-1

Q67040-S4594

IKB03N120H2

1200V

3A

0.15mJ

150°C

P-TO-263 (D

Q67040-S4597

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

1200

V

Triangular collector current

°C, f = 140kHz

°C, f = 140kHz

9.6

3.9

9.9

Turn off safe operating area

-

9.9

A

Diode forward current

°C

°C

9.6

3.9

Gate-emitter voltage

±20

V

Power dissipation

°C

62.5

W

Operating junction and storage temperature

-40...+150

Soldering temperature, 1.6mm (0.063 in.) from case for 10s

-

260

225 (for SMD)

°C

P-TO-220-3-1

(TO-220AB)

P-TO-263-3-2 (D²-PAK)

(TO-263AB)

P-TO-247-3-1

(TO-247AC)

G

C

E