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F1T1G Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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F1T1G Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
1 / 2 page - 378 - F1T1G THRU F1T7G 1.0 AMP. Glass Passivated Fast Recovery Rectifiers Voltage Range 50 to 1000 Volts Current 1.0 Ampere Features Low forward voltage drop High current capability High reliability High surge current capability Mechanical Data Cases: Molded plastic Epoxy: UL 94V-0 rate flame retardant Lead: Axial leads, solderable per MIL-STD- 202, Method 208 guaranteed Polarity: Color band denotes cathode end High temperature soldering guaranteed: 260 ℃/10 seconds/.375”,(9.5mm) lead lengths at 5 lbs.,(2.3kg) tension Mounting position: Any Weight: 0.20 gram TS-1 Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Rating at 25 ℃ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Symbol F1T 1G F1T 2G F1T 3G F1T 4G F1T 5G F1T 6G F1T 7G Units Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 V Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 V Maximum Average Forward Rectified Current .375”(9.5mm) Lead Length @TA = 55 ℃ I(AV) 1.0 A Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) IFSM 30 A Maximum Instantaneous Forward Voltage @ 1.0A VF 1.3 V Maximum DC Reverse Current @ TA=25 ℃ at Rated DC Blocking Voltage @ TA=125 ℃ IR 5.0 100 uA uA Maximum Reverse Recovery Time ( Note 1 ) Trr 150 250 500 nS Typical Junction Capacitance ( Note 2 ) Cj 15 pF Typical Thermal Resistance ( Note 3 ) R θJA 90 O C/W Operating Temperature Range TJ -65 to +150 ℃ Storage Temperature Range TSTG -65 to +150 ℃ Notes: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A 2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 Volts D.C. 3. Mount on Cu-Pad Size 5mm x 5mm on P.C.B. |
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