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FDS6986AS Datasheet(PDF) 8 Page - Fairchild Semiconductor

Part # FDS6986AS
Description  Dual Notebook Power Supply N-Channel PowerTrench SyncFET
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Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDS6986AS Datasheet(HTML) 8 Page - Fairchild Semiconductor

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FDS6986AS Rev A (X)
Typical Characteristics (continued)
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in
parallel with PowerTrench MOSFET. This diode exhibits
similar characteristics to a discrete external Schottky
diode in parallel with a MOSFET. Figure 22 shows the
reverse recovery characteristic of the FDS6986AS.
Figure 22. FDS6986AS SyncFET body diode
reverse recovery characteristic.
For comparison purposes, Figure 23 shows the reverse
recovery characteristics
of
the
body diode
of
an
equivalent size MOSFET produced without SyncFET
(FDS6690A).
Figure 23. Non-SyncFET (FDS6690A) body
diode reverse recovery characteristic.
Schottky barrier diodes exhibit significant leakage at high
temperature and high reverse voltage. This will increase
the power in the device.
0.000001
0.00001
0.0001
0.001
0.01
0.1
0
5
10
15
20
25
30
VDS, REVERSE VOLTAGE (V)
125
oC
25
oC
100
oC
Figure 24. SyncFET body diode reverse
leakage versus drain-source voltage and
temperature.
12.5nS/DIV
12.5nS/DIV


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