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ADC08D1500EVAL Datasheet(PDF) 9 Page - National Semiconductor (TI) |
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ADC08D1500EVAL Datasheet(HTML) 9 Page - National Semiconductor (TI) |
9 / 33 page Converter Electrical Characteristics (Continued) NOTE: This product is currently in development and the parameters specified in this section are DESIGN TARGETS. The specifications in this section cannot be guaranteed until device characterization has taken place. The following specifications apply after calibration for V A =VDR = +1.9VDC, OutV = 1.9V, VIN FSR (a.c. coupled) = differential 870mVP-P,CL = 10 pF, Differential, a.c. coupled Sinewave Input Clock, f CLK = 1.5 GHz at 0.5VP-P with 50% duty cycle, VBG = Floating, Non- Extended Control Mode, SDR Mode, R EXT = 3300 Ω ±0.1%, Analog Signal Source Impedance = 100Ω Differential. Boldface limits apply for T A =TMIN to TMAX. All other limits TA = 25˚C, unless otherwise noted. (Notes 6, 7) Symbol Parameter Conditions Typical (Note 8) Limits (Note 8) Units (Limits) ANALOG INPUT AND REFERENCE CHARACTERISTICS V IN Full Scale Analog Differential Input Range FSR pin 14 Low 650 570 mV P-P (min) 730 mV P-P (max) FSR pin 14 High 870 790 mV P-P (min) 950 mV P-P (max) V CMI Analog Input Common Mode Voltage V CMO V CMO −50 V CMO +50 mV (min) mV (max) C IN Analog Input Capacitance, Normal operation (Notes 10, 11) Differential 0.02 pF Each input pin to ground 1.6 pF Analog Input Capacitance, DES Mode (Notes 10, 11) Differential 0.08 pF Each input pin to ground 2.2 pF R IN Differential Input Resistance 100 94 Ω (min) 106 Ω (max) ANALOG OUTPUT CHARACTERISTICS V CMO Common Mode Output Voltage 1.26 0.95 1.45 V (min) V (max) V CMO_LVL V CMO input threshold to set DC Coupling mode V A = 1.8V 0.60 V V A = 2.0V 0.66 V TC V CMO Common Mode Output Voltage Temperature Coefficient T A = −40˚C to +85˚C 118 ppm/˚C C LOAD V CMO Maximum V CMO load Capacitance 80 pF V BG Bandgap Reference Output Voltage I BG = ±100 µA 1.26 1.20 1.33 V (min) V (max) TC V BG Bandgap Reference Voltage Temperature Coefficient T A = −40˚C to +85˚C, I BG = ±100 µA 28 ppm/˚C C LOAD V BG Maximum Bandgap Reference load Capacitance 80 pF TEMPERATURE DIODE CHARACTERISTICS ∆V BE Temperature Diode Voltage 192 µA vs. 12 µA, T J = 25˚C 71.23 mV 192 µA vs. 12 µA, T J = 85˚C 85.54 mV CHANNEL-TO-CHANNEL CHARACTERISTICS Offset Match 1 LSB Positive Full-Scale Match Zero offset selected in Control Register 1 LSB Negative Full-Scale Match Zero offset selected in Control Register 1 LSB Phase Matching (I,Q) F IN = 1.0 GHz < 1 Degree X-TALK Crosstalk from I (Agressor) to Q (Victim) Channel Aggressor = 867 MHz F.S. Victim = 100 MHz F.S. -71 dB X-TALK Crosstalk from Q (Agressor) to I (Victim) Channel Aggressor = 867 MHz F.S. Victim = 100 MHz F.S. -71 dB www.national.com 9 |
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