NTD40N03R-1G datasheet(2/8 Pages) ONSEMI

Part #	NTD40N03R-1G

Description	Power MOSFET 45 Amps, 25 Volts

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NTD40N03R

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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Characteristics

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage (Note 3)

(VGS = 0 Vdc, ID = 250 mAdc)

Temperature Coefficient (Positive)

V(br)DSS

25

−

28

−

Vdc

mV/

°C

Zero Gate Voltage Drain Current

(VDS = 20 Vdc, VGS = 0 Vdc)

(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 150°C)

IDSS

−

1.0

10

mAdc

Gate−Body Leakage Current

(VGS = ±20 Vdc, VDS = 0 Vdc)

IGSS

−

±100

nAdc

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage (Note 3)

(VDS = VGS, ID = 250 mAdc)

Threshold Temperature Coefficient (Negative)

VGS(th)

1.0

−

1.7

−

2.0

−

Vdc

mV/

°C

Static Drain−to−Source On−Resistance (Note 3)

(VGS = 4.5 Vdc, ID = 10 Adc)

(VGS = 10 Vdc, ID = 10 Adc)

RDS(on)

−

18.6

12.6

23

16.5

m

W

Forward Transconductance (Note 3)

(VDS = 10 Vdc, ID = 10 Adc)

gFS

−

20

−

Mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

Ciss

−

584

−

pF

Output Capacitance

(VDS = 20 Vdc, VGS = 0 V, f = 1 MHz)

Coss

−

254

−

Transfer Capacitance

( DS

,

GS

,)

Crss

−

99

−

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time

td(on)

−

4.5

−

ns

Rise Time

(VGS = 10 Vdc, VDD = 10 Vdc,

tr

−

19.5

−

Turn−Off Delay Time

(VGS = 10 Vdc, VDD = 10 Vdc,

ID = 10 Adc, RG = 3 W)

td(off)

−

16.7

−

Fall Time

tf

−

3.5

−

Gate Charge

QT

−

5.78

−

nC

(VGS = 4.5 Vdc, ID = 10 Adc,

VDS = 10 Vdc) (Note 3)

Q1

−

2.1

−

VDS = 10 Vdc) (Note 3)

Q2

−

2.5

−

SOURCE−DRAIN DIODE CHARACTERISTICS

Forward On−Voltage

(IS = 10 Adc, VGS = 0 Vdc) (Note 3)

VSD

085

12

Vdc

(IS = 10 Adc, VGS = 0 Vdc) (Note 3)

(IS = 10 Adc, VGS = 0 Vdc, TJ = 125°C)

−

0.85

0.71

1.2

−

dc

Reverse Recovery Time

trr

−

20.4

−

ns

(IS = 10 Adc, VGS = 0 Vdc,

ta

−

8.25

−

(IS = 10 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/ms) (Note 3)

tb

−

12.1

−

Reverse Recovery Stored Charge

QRR

−

0.007

−

mC

3. Pulse Test: Pulse Width

≤ 300 ms, Duty Cycle ≤ 2%.

4. Switching characteristics are independent of operating junction temperatures.

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