July 30, 2003 Ver. 5

ABSOLUTE MAXIMUM RATINGS

*When implemented on a glass epoxy PCB (SOT26 package)

ELECTRICAL CHARACTERISTICS

XC2164A51M, T, V Fundamental

5.0V Operation (unless otherwise stated, VDD=5.0V, No Load, Ta=30 ~ + 80

/INH=Open, Q0=Open

XC2164A51M, V

f=30MHz

XC2164A51T

/INH= " L ", Q0=Open

XC2164A51M, V

f=30MHz

XC2164A51T

XC2164A51M, V

XC2164A51T

XC2164A51M, V

XC2164A51T

note 1 : the values for Cg, Cd are the designed values.

XC2164A51M Fundamental

3.3V Operation (unless otherwise stated, VDD=3.3V, No Load, Ta=30 ~ + 80

/INH=Open, Q0=Open

XC2164A51M, V

f=30MHz

XC2164A51T

/INH= " L ", Q0=Open

XC2164A51M, V

f=30MHz

XC2164A51T

XC2164A51M, V

XC2164A51T

XC2164A51M, V

XC2164A51T

* note 1 : the values for Cg, Cd are the designed values.

Cd

( * )

35

20

2

( 4 )

( * )

/INH=0.7VDD

35

2

( 4 )

2.4

MAX.

2.97

µA

35

Consumption Current 1

Consumption Current 2

IDD1

IDD2

/INH=0.7VDD

/INH="L"

CMOS : 2.97V, IOH= - 8mA

Output Diable Leakage Current

VIH

Operating Supply Voltage

Internal Oscillation Feedback Resistance

Consumption Current 2

IDD2

Internal Oscillation Capacitance

Cg

Input pull up resistance 2

Consumption Current 1

IDD1

"H" Level Input Voltage

"L" Level Input Voltage

"H" Level Input Voltage

"L" Level Input Voltage

PARAMETER

Internal Oscillation Capacitance

"H" Level Output Voltage

"L" Level Output Voltage

Input pull up resistance 1

Input pull up resistance 2

Rup2

Rup1

CMOS : VDD -= 4.5V, IOH= - 16mA

CMOS : VDD = 4.5V, IOH=16mA

/INH="L"

VIL

XC2164 Series

ICs for use with Crystal Oscillators

UNITS

V

V

TYP.

VIH

2.4

MIN.

4.5

VDD

VOL

Output Disable Leakage Current

Internal Oscillation Feedback Resistance

Cd

Input pull up resistance 1

/INH="L"

Rup2

35

5

4

Rup1

1.0

2.0

70

VOH

2.5

"H" Level Output Voltage

VOL

"L" Level Output Voltage

CMOS : 2.97V, IOH=8mA

VIL

Rf

IOZ

3.30

3.63

SYMBOL

MIN.

TYP.

VDD

CONDITIONS

10

/INH="L"

Rf

25

3.5

20

IOZ

Cg

35

50

( * )

( * )

20

5

0.5

1.0

5

11

VOH

3.9

4.2

0.4

100

11

( 15 )

0.3

( 8 )

2.0

( 8 )

( 15 )

MAX.

5.5

5.0

SYMBOL

PARAMETER

CONDITIONS

Tstg

-65 ~ +150 (Chip Form)

V

Operating Supply Voltage

SYMBOL

UNITS

CONDITIONS

Vss - 0.3 to Vss + 7.0

VIN

Pd

250*

Vss - 0.3 to VDD + 0.3

VDD

Storage Temperature

Topr

Operating Ambient

Temperature

-55 ~ +125 (SOT-26)

-40 ~ +85

M

Ω

µA

M

Ω

0.4

V

pF

mA

( 6.5 )

4.0

140

µA

0.4

V

V

( 8 )

20

7.0

10

PARAMETER

Supply Voltage

Input Voltage

Continuous Total Power

Dissipation

V

V

V

V

mW

0.4

mA

M

Ω

k

Ω

pF

M

Ω

µA

UNITS

V

V

k

Ω

Semiconductor Ltd.

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