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MPC17531AEV Datasheet(PDF) 11 Page - Freescale Semiconductor, Inc |
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MPC17531AEV Datasheet(HTML) 11 Page - Freescale Semiconductor, Inc |
11 / 19 page Analog Integrated Circuit Device Data Freescale Semiconductor 11 17531A TYPICAL APPLICATIONS FUNCTIONAL TERMINAL DESCRIPTION TYPICAL APPLICATIONS Figure 8 shows a typical application for the 17531A. When applying the gate voltage to the CRES terminal from an external source, be sure to connect it via a resistor equal to, or greater than, RG = V CRES/0.02 Ω. The internal charge pump of this device is generated from the VDD supply; therefore, care must be taken to provide sufficient gate-source voltage for the high-side MOSFETs when VM >> VDD (e.g., VM = 5.0 V, VDD = 3.3 V), in order to ensure full enhancement of the high-side MOSFET channels. Figure 8. 17531A Typical Application Diagram CEMF SNUBBING TECHNIQUES Care must be taken to protect the IC from potentially damaging CEMF spikes induced when commutating currents in inductive loads. Typical practice is to provide snubbing of voltage transients via placing a capacitor or zener at the supply terminal (VM) (see Figure 9). PCB LAYOUT When designing the printed circuit board (PCB), connect sufficient capacitance between power supply and ground terminals to ensure proper filtering from transients. For all high-current paths, use wide copper traces and shortest possible distances. Figure 9. CEMF Snubbing Techniques MCU 17531A 3.3 V GND C1L C1H C2L C2H CRES IN1B IN2A IN2B PSAVE VM VDD OUT1B OUT2B OUT1A IN1A OUT2A 5.0 V NC NC NC NC VC RES < 14 V RG > VC RES/0.02 Ω 0.01 µF RG NC = No Connect 17531A GND C1L C1H C2L C2H CRES VM VDD OUT OUT 17531A 3.3 V GND C1L C1H C2L C2H CRES VM VDD OUT OUT 5.0 V 3.3 V 5.0 V |
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