IC42S32400

IC42S32400L

2

Integrated Circuit Solution Inc.

DR038-0C 02/01/2005

ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors

which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc.

1M Words x 32 Bits x 4 Banks (128-MBIT)

SYNCHRONOUS DYNAMIC RAM

FEATURES

· Concurrent auto precharge

· Clock rate:166/143/125 MHz

· Fully synchronous operation

· Internal pipelined architecture

· Four internal banks (1M x 32bit x 4bank)

· Programmable Mode

-CAS#Latency:2 or 3

-Burst Length:1,2,4,8,or full page

-Burst Type:interleaved or linear burst

-Burst-Read-Single-Write

· Burst stop function

· Individual byte controlled by DQM0-3

· Auto Refresh and Self Refresh

· 4096 refresh cycles/64ms

· Single +3.3V ±0.3V power supply

· Interface:LVTTL

· Package:400 x 875 mil,86 Pin TSOP-2,0.50mm Pin

Pitch and 11x13mm, 90 Ball BGA, Ball pitch 0.8mm

· Pb-free package is available.

DESCRIPTION

The ICSI IC42S32400 and IC42S32400L is a high-speed

CMOS configured as a quad 1M x 32 DRAM with a

synchronous interface (all signals are registered on the

positive edge of the clock signal,CLK).

Each of the 1M x 32 bit banks is organized as 4096 rows

by 256 columns by 32 bits.Read and write accesses start

at a selected locations in a programmed sequence.

Accesses begin with the registration of a BankActive

command which is then followed by a Read or Write

command

The ICSI IC42S32400 and IC42S32400L provides for

programmable Read or Write burst lengths of 1,2,4,8,or

full page, with a burst termination operation. An auto

precharge function may be enable to provide a self-timed

row precharge that is initiated at the end of the burst

sequence.The refresh functions,either Auto or Self

Refresh are easy to use.

By having a programmable mode register,the system

can choose the most suitable modes to maximize its

performance.

These devices are well suited for applications requiring

high memory bandwidth.