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IC41C8512-35KI Datasheet(PDF) 7 Page - Integrated Circuit Solution Inc

Part # IC41C8512-35KI
Description  512K x 8 bit Dynamic RAM with EDO Page Mode
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Manufacturer  ICSI [Integrated Circuit Solution Inc]
Direct Link  http://www.icsi.com.tw
Logo ICSI - Integrated Circuit Solution Inc

IC41C8512-35KI Datasheet(HTML) 7 Page - Integrated Circuit Solution Inc

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IC41C8512
IC41LV8512
Integrated Circuit Solution Inc.
7
DR029-0A 09/28/2001
ELECTRICAL CHARACTERISTICS(1)
(Recommended Operating Conditions unless otherwise noted.)
Symbol Parameter
Test Condition
Speed Min.
Max.
Unit
IIL
Input Leakage Current
Any input 0V
≤ VIN ≤ Vcc
–10
10
µA
Other inputs not under test = 0V
IIO
Output Leakage Current
Output is disabled (Hi-Z)
–10
10
µA
0V
≤ VOUT ≤ Vcc
VOH
Output High Voltage Level
IOH = –2.5 mA
2.4
V
VOL
Output Low Voltage Level
IOL =+2.1mA
0.4
V
ICC1
Standby Current: TTL
RAS, CAS ≥ VIH
5V
2
mA
3.3V
0.5
ICC2
Standby Current: CMOS
RAS, CAS ≥ VCC – 0.2V
5V
1
mA
3.3V
0.5
ICC3
Operating Current:
RAS, CAS,
-35
120
mA
Random Read/Write(2,3,4)
Address Cycling, tRC = tRC (min.)
-50
110
Average Power Supply Current
-60
100
ICC4
Operating Current:
RAS = VIL, CAS,
-35
100
mA
EDO Page Mode(2,3,4)
Cycling tPC = tPC (min.)
-50
90
Average Power Supply Current
-60
80
ICC5
Refresh Current:
RAS Cycling, CAS ≥ VIH
-35
120
mA
RAS-Only(2,3)
tRC = tRC (min.)
-50
110
Average Power Supply Current
-60
100
ICC6
Refresh Current:
RAS, CAS Cycling
-35
120
mA
CBR(2,3,5)
tRC = tRC (min.)
-50
110
Average Power Supply Current
-60
100
Notes:
1. An initial pause of 200 µs is required after power-up followed by eight
RAS refresh cycles (RAS-Only or CBR) before proper device
operation is assured. The eight
RAS cycles wake-up should be repeated any time the tREF refresh requirement is exceeded.
2. Dependent on cycle rates.
3. Specified values are obtained with minimum cycle time and the output open.
4. Column-address is changed once each EDO page cycle.
5. Enables on-chip refresh and address counters.


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