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RA13H4452M Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor

Part # RA13H4452M
Description  440-520MHz 13W 12.5V MOBILE RADIO
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

RA13H4452M Datasheet(HTML) 2 Page - Mitsubishi Electric Semiconductor

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MITSUBISHI RF POWER MODULE
RA 13H4452 M
RA13H4452M
MITSUBISHI ELECTRIC
23 Dec 2002
2/9
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
RATING
UNIT
VDD
Drain Voltage
VGG<5V
17
V
VGG
Gate Voltage
VDD<12.5V, Pin=0mW
6
V
Pin
Input Power
100
mW
Pout
Output Power
f=440-520MHz,
ZG=ZL=50Ω
20
W
Tcase(OP)
Operation Case Temperature Range
-30 to +110
°C
Tstg
Storage Temperature Range
-40 to +110
°C
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
f
Frequency Range
440
520
MHz
Pout
Output Power
13
W
η
T
Total Efficiency
40
%
2fo
2
nd Harmonic
-30
dBc
ρ
in
Input VSWR
3:1
—
IGG
Gate Current
VDD=12.5V
VGG=5V
Pin=50mW
1
mA
—
Stability
VDD=10.0-15.2V, Pin=25-70mW,
Pout<20W (VGG control), Load VSWR=3:1
No parasitic oscillation
—
—
Load VSWR Tolerance
VDD=15.2V, Pin=50mW, Pout=13W (VGG control),
Load VSWR=20:1
No degradation or
destroy
—
All parameters, conditions, ratings, and limits are subject to change without notice.


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