DG201HS

4

Siliconix

E-77071—Rev. E, 01-Sep-97

Conditions Unless

Otherwise Specified

V+ = 10.8 V to 16.5 V

A Suffix

–55 to 125

_C

D Suffix

–40 to 85

_C

Parameter

Symbol

V+ = 10.8 V to 16.5 V

V– = GND = 0 V

Unit

Analog Switch

Full

0

V+

0

V+

V

Drain-Source On-Resistance

V+ = 10.8 V

Room

Full

65

90

120

90

120

W

Switch Off Leakage Current

V

10V 05V

Room

Full

0.1

–1

–60

1

60

–1

–20

1

20

Switch Off Leakage Current

,

S

,

Room

Full

0.1

–1

–60

1

60

–1

–20

1

20

nA

Channel On Leakage Current

Room

Full

0.1

–1

–60

1

60

–1

–20

1

20

Digital Control

Input, High Voltage

Full

2.4

2.4

V

Input, Low Voltage

Full

0.8

0.8

V

Input Capacitance

Full

5

pF

Input Current

V+ = 16.5 V

Full

–1

1

–1

1

mA

Dynamic Characteristics

Turn-On Time

R1 k

W C35 F V

2 V

Room

Full

50

70

50

70

Turn-Off Time

V= 10.8 V, See Figure 2

Room

Full

50

70

50

70

ns

Room

150

Output Settling Time to 0.1%

Room

180

Charge Injection

Q

Room

10

pC

Off Isloation

OIRR

f = 100 kHz

Room

85

dB

Crosstalk

(Channel-to-Channel)

Any Other Channel Switches

f = 100 kHz

Room

100

dB

Source Off Capacitance

f=1MHz

Room

10

Drain Off Capacitance

f = 1 MHz

Room

10

pF

Channel On Capacitance

Room

30

Power Supplies

Positive Supply Current

I+

Full

10

10

mA

Full

150

150

mW

Notes:

a.

Refer to PROCESS OPTION FLOWCHART.

b.

Room = 25

_C, Full = as determined by the operating temperature suffix.

c.

Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.

d.

The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.

e.

Guaranteed by design, not subject to production test.

f.