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5
HX6356
IDDSB1
Static Supply Current
0.2
1.5
mA
IDDSBMF Standby Supply Current - Deselected
0.2
1.5
mA
IDDOPW
Dynamic Supply Current, Selected (Write)
3.4
4.0
mA
IDDOPR
Dynamic Supply Current, Selected (Read)
2.8
4.0
mA
II
Input Leakage Current
-1
+1
µA
IOZ
Output Leakage Current
-1
+1
µA
VIL
Low-Level Input Voltage
1.7
VIH
High-Level Input Voltage
3.2
DC ELECTRICAL CHARACTERISTICS
Units
Test Conditions
Min
Max
Worst Case (2)
Symbol
Parameter
Typical
(1)
NCS=VDD, IO=0,
f=40 MHz
VIH=VDD, IO=0
VIL=VSS, f=0MHz
f=1 MHz, IO=0, CE=VIH=VDD
NCS=VIL=VSS (3)
f=1 MHz, IO=0, CE=VIH=VDD
NCS=VIL=VSS (3)
VSS
≤VI≤VDD
VSS
≤VIO≤VDD
Output=high Z
CMOS
0.7xVDD
V
March Pattern
TTL
2.2
V
VDD = 5.5V
4.3
4.2
V
VDD = 4.5V, IOH = -5 mA
4.5
VDD-0.1
V
VDD = 4.5V, IOH = -200
µA
CMOS
0.3xVDD
V
March Pattern
TTL
0.8
V
VDD = 4.5V
VOL
Low-Level Output Voltage
VOH
High-Level Output Voltage
(1) Typical operating conditions: VDD= 5.0 V,TA=25
°C, pre-radiation.
(2) Worst case operating conditions: VDD=4.5 V to 5.5 V, -55
°C to +125°C, post total dose at 25°C.
(3) All inputs switching. DC average current.
DUT
output
Valid low
output
Vref1
CL >50 pF*
249
Ω
Tester Equivalent Load Circuit
2.9 V
Valid high
output
Vref2
-
+
-
+
*CL = 5 pF for TWLQZ, TSHQZ, TELQZ, and TGHQZ
0.3
0.4
V
VDD = 4.5V, IOL = 10 mA (CMOS)
= 8 mA (TTL)
0.005
0.1
V
VDD = 4.5V, IOL = 200
µA
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