IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

IXYS reserves the right to change limits, test conditions, and dimensions.

IXTA/IXTP 3N120

IXTA/IXTP 3N110

V

0.2

0.4

0.6

0.8

1.0

0

1

2

3

4

5

Pulse Width - Seconds

0.00

0.01

0.10

1.00

V

0

5

10

15

20

25

30

35

40

10

100

1000

Gate Charge - nC

0

102030405060

0

2

4

6

8

10

12

Crss

Coss

Ciss

V

I

f = 1MHz

T

T

V

Single Pulse

Fig. 7 Gate Charge Characteristic Curve

Fig.8 Capacitance Curves

Fig. 9 Drain Current vs Drain to Source Voltage

Fig.10 Transient Thermal Impedance