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IXTP3N120 Datasheet(PDF) 4 Page - IXYS Corporation |
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IXTP3N120 Datasheet(HTML) 4 Page - IXYS Corporation |
4 / 4 page IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 IXYS reserves the right to change limits, test conditions, and dimensions. IXTA/IXTP 3N120 IXTA/IXTP 3N110 V SD - Volts 0.2 0.4 0.6 0.8 1.0 0 1 2 3 4 5 Pulse Width - Seconds 10-4 10-3 10-2 10-1 100 101 0.00 0.01 0.10 1.00 V DS - Volts 0 5 10 15 20 25 30 35 40 10 100 1000 Gate Charge - nC 0 102030405060 0 2 4 6 8 10 12 Crss Coss Ciss V DS = 600V I D = 1.5A f = 1MHz T J = 125 OC T J = 25 OC V GS = 0V Single Pulse Fig. 7 Gate Charge Characteristic Curve Fig.8 Capacitance Curves Fig. 9 Drain Current vs Drain to Source Voltage Fig.10 Transient Thermal Impedance |
Similar Part No. - IXTP3N120 |
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Similar Description - IXTP3N120 |
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