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AS4C1M16F5-50JC Datasheet(PDF) 3 Page - List of Unclassifed Manufacturers

Part # AS4C1M16F5-50JC
Description  5V 1M X 16 CMOS DRAM
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Manufacturer  ETC1 [List of Unclassifed Manufacturers]
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AS4C1M16F5-50JC Datasheet(HTML) 3 Page - List of Unclassifed Manufacturers

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AS4C1M16F5
4/11/01; v.0.9.1
Alliance Semiconductor
P. 3 of 21
®
Absolute maximum ratings
DC electrical characteristics
Parameter
Symbol
Min
Max
Unit
Input voltage
Vin
-1.0
+7.0
V
Input voltage (DQs)
VDQ
-1.0
VCC + 0.5
V
Power supply voltage
VCC
-1.0
+7.0
V
Storage temperature (plastic)
TSTG
-55
+150
°C
Soldering temperature × time
TSOLDER
–260 × 10
oC × sec
Power dissipation
PD
–1
W
Short circuit output current
Iout
–50
mA
Parameter
Symbol
Test conditions
-50
-60
Unit
Notes
MinMax
MinMax
Input leakage current
IIL
0V
≤ V
in ≤ +5.5V,
Pins not under test = 0V
-5
+5
-5
+5
µA
Output leakage current
IOL
DOUT disabled, 0V ≤ Vout ≤ +5.5V
-5+5-5+5
µA
Operating power
supply current
ICC1
RAS
, UCAS, LCAS, Address cycling;
tRC=min
170
160
mA
1,2
TTL standby power
supply current
ICC2
RAS
= UCAS = LCAS
≥ V
IH
2.5
2.5
mA
Average power supply
current, RAS refresh mode
or CBR
ICC3
RAS
cycling, UCAS = LCAS
≥ V
IH,
tRC = min of RAS low after XCAS low.
170
160
mA
1
Fast page mode average
power supply current
ICC4
RAS
= VIL, UCAS or LCAS,
address cycling: tPC = min
120
110
mA
1, 2
CMOS standby power
supply current
ICC5
RAS
= UCAS = LCAS = VCC - 0.2V
2.0
2.0
mA
Output voltage
VOH
IOUT = -5.0 mA
2.4
2.4
V
VOL
IOUT = 4.2 mA
0.4
0.4
V
CAS
before RAS refresh
current
ICC6
RAS
, UCAS or LCAS cycling, tRC = min
170
160
mA


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