HY57V561620(L)T

4Banks x 4M x 16Bit Synchronous DRAM

This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any

responsibility for use of circuits described. No patent licenses are implied.

Revision 1.8 / Apr.01

DESCRIPTION

The HY57V561620T is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications

which require large memory density and high bandwidth. HY57V561620 is organized as 4 banks of 4,194,304x16.

The HY57V561620T is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and

outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve very

high bandwidth. All input and output voltage levels are compatible with LVTTL.

Programmable options include the length of pipeline ( CAS latency of 2 or 3), the number of consecutive read or write

cycles initiated by a single control command (Burst length of 1,2,4,8 or full page), and the burst count

sequence(sequential or interleave). A burst of read or write cycles in progress can be terminated by a burst terminate

command or can be interrupted and replaced by a new burst read or write command on any cycle. (This pipelined

design is not restricted by a `2N` rule.)

FEATURES

•

Single 3.3V

•

All device pins are compatible with LVTTL interface

•

JEDEC standard 400mil 54pin TSOP-II with 0.8mm

of pin pitch

•

All inputs and outputs referenced to positive edge of

system clock

•

Data mask function by UDQM and LDQM

•

Internal four banks operation

•

Auto refresh and self refresh

•

8192 refresh cycles / 64ms

•

Programmable Burst Length and Burst Type

- 1, 2, 4, 8 and Full Page for Sequential Burst

- 1, 2, 4 and 8 for Interleave Burst

•

Programmable CAS Latency ; 2, 3 Clocks

ORDERING INFORMATION

Part No.

Clock Frequency

Power

Organization

Interface

Package

HY57V561620T-HP

133MHz

Normal

4Banks x 4Mbits

x16

LVTTL

400mil 54pin TSOP II

HY57V561620T-H

133MHz

HY57V561620T-8

125MHz

HY57V561620T-P

100MHz

HY57V561620T-S

100MHz

HY57V561620LT-HP

133MHz

Lower

Power

HY57V561620LT-H

133MHz

HY57V561620LT-8

125MHz

HY57V561620LT-P

100MHz

HY57V561620LT-S

100MHz