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AO4916, AO4916L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
13.4
16
22
26
0.76
0
2
4
6
8
10
0
4
8
12
16
20
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
250
500
750
1000
1250
1500
0
5
10
15
20
25
30
VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
0
10
20
30
40
50
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Coss
Crss
0.1
1.0
10.0
100.0
0.1
1
10
100
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
µs
10ms
1ms
0.1s
1s
10s
DC
RDS(ON)
limited
TJ(Max)=150°C
TA=25°C
VDS=15V
ID=8.5A
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
Ton
T
PD
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ(Max)=150°C
TA=25°C
10
µs
Alpha & Omega Semiconductor, Ltd.
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