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DC9012
DISCRETE SEMICONDUCTORS
R
DC COMPONENTS CO., LTD.
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in 1W output amplifier of portable
redios in class B push-pull operation.
Pinning
1 = Emitter
2 = Base
3 = Collector
Characteristic
Symbol
Rating
Unit
Collector-Base Voltage
VCBO
-40
V
Collector-Emitter Voltage
VCEO
-20
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
IC
-500
mA
Base Current
IB
-100
mA
Total Power Dissipation
PD
625
mW
Junction Temperature
TJ
+150
o
C
Storage Temperature
TSTG
-55 to +150
o
C
Absolute Maximum Ratings(TA=25oC)
TO-92
.022(0.56)
.014(0.36)
.050
(1.27)
.148(3.76)
.132(3.36)
Typ
.190(4.83)
.170(4.33)
.100
(2.54)
Typ
.050
(1.27)
Typ
.022(0.56)
.014(0.36)
.190(4.83)
.170(4.33)
.500
(12.70)
Min
2oTyp
5oTyp.
2oTyp
3 2 1
5oTyp.
Dimensions in inches and (millimeters)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Conditions
Collector-Base Breakdown Volatge
BVCBO
-40
-
-
V
IC=-100
µA, IE=0
Collector-Emitter Breakdown Voltage
BVCEO
-20
-
-
V
IC=-1mA, IB=0
Emitter-Base Breakdown Volatge
BVEBO
-5
-
-
V
IE=-100
µA, IC=0
Collector Cutoff Current
ICBO
-
-
-0.1
µA
VCB=-25V, IE=0
Emitter Cutoff Current
IEBO
-
-
-0.1
µA
VEB=-3V, IC=0
Collector-Emitter Saturation Voltage(1)
VCE(sat)
-
-
-0.6
V
IC=-500mA, IB=-50mA
Base-Emitter Saturation Voltage(1)
VBE(sat)
-
-
-1.2
V
IC=-500mA, IB=-50mA
Base-Emitter On Voltage(1)
VBE(on)
-
-
-0.9
V
IC=-10mA, VCE=-1V
DC Current Gain(1)
hFE1
64
-
300
-
IC=-50mA, VCE=-1V
hFE2
40
-
-
-
IC=-500mA, VCE=-1V
Transition Frequency
fT
100
-
-
MHz
IC=-10mA, VCE=-1V, f=100MHz
Output Capacitance
Cob
-
-
8
pF
VCB=-10V, f=1MHz
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
(1)Pulse Test: Pulse Width
380
µs, Duty Cycle 2%
Rank
D
E
F
G
H
I
I1
I2
Range
64~91
78~112
96~135
112~166
144~202
176~300
176~246
214~300
Classification of hFE1
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Mexican
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New Zealand
