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ILD03N60 Datasheet(PDF) 3 Page - Infineon Technologies AG |
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ILD03N60 Datasheet(HTML) 3 Page - Infineon Technologies AG |
3 / 15 page ILA03N60, ILP03N60 ^ ILB03N60, ILD03N60 Power Semiconductors 3 Rev. 1.2 Apr-04 Electrical Characteristic, at Tj = 25 °C, unless otherwise specified continued Value Parameter Symbol Conditions min. typ. max. Unit Zero gate voltage collector current ICES VCE=600V,VGE=0V Tj=25 °C Tj=150 °C - - 1 - 20 250 µA Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=20V, IC=3.0A - 1.5 - S Capacities, Gate Charge, at Tj=25 °C Value Parameter Symbol Conditions min. typ. max. Unit Input capacitance Ciss - 110 - Output capacitance Coss - 6 - Reverse transfer capacitance Crss VCE=25V, VGE=0V, f=1MHz - 4 - pF Effective Output Capacitance (Energy related) Co(er) VGE=0V, VCE=0V to 480V 3.7 pF Gate to emitter charge QGE - 1 - Gate to collector charge QGC - 5.5 - Gate total charge QG - 8.5 - nC Gate plateau voltage Vm VCE=400V, IC=3.0A, VGE=10V - 6.5 - V Gate to emitter charge QGE - 0.5 - Gate to collector charge QGC - 4.0 - Gate total charge QG - 8 - nC Gate plateau voltage Vm VCE=400V, IC=0.8A, VGE=10V - 3.5 - V Switching Characteristic, Inductive Load, at Tj=25 °C Value Parameter Symbol Conditions min. typ. max. Unit IGBT Characteristic Turn-on delay time td(on) - 15 - Rise time tr - 35 - Turn-off delay time td(off) - 100 - Fall time tf - 100 - ns Turn-on energy Eon 3 - 12 - Turn-off energy Eoff VCC=400V, IC=0.8A, VGE=0/10V, RG=60 Ω, CSnubber =0nF (CSnubber: Snubber capacitor) - 20 - Turn-off energy Eoff CSnubber =1nF - 8 - µJ 3 Eon includes SDP04S60 diode commutation losses |
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Similar Description - ILD03N60 |
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