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STPS120M Datasheet(PDF) 3 Page - STMicroelectronics |
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STPS120M Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 6 page STPS120M 3/6 Figure 3: Normalized avalanche power derating versus pulse duration Figure 4: Normalized avalanche power derating versus junction temperature Figure 5: Non repetitive surge peak forward current versus overload duration (maximum values) Figure 6: Relative variation of thermal impedance junction to ambient versus pulse duration Figure 7: Reverse leakage current versus reverse voltage applied (typical values) Figure 8: Junction capacitance versus reverse voltage applied (typical values) 0.001 0.01 0.1 0.01 1 0.1 10 100 1000 1 t (µs) p P(t ) P (1µs) ARM p ARM 0 0.2 0.4 0.6 0.8 1 1.2 25 50 75 100 125 150 T (°C) j P(t ) P (25°C) ARM p ARM 0 2 4 6 8 10 12 14 16 18 20 22 1.E-03 1.E-02 1.E-01 1.E+00 IM t δ=0.5 I (A) M t(s) T =25°C C T =75°C C T =125°C C 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.E-04 1.E-03 1.E-02 1.E-01 T δ=tp/T tp δ = 0.5 δ = 0.2 δ = 0.1 Single pulse Z/R th(j-c) th(j-c) t (s) p 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 02468 10 12 14 16 18 20 I (mA) R V (V) R T =125°C j T =150°C j T =100°C j T =50°C j T =25°C j T =75°C j 10 100 1000 110 100 C(pF) V (V) R F=1MHz V =30mV T =25°C OSC RMS j |
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