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DG271BDY-E3 Datasheet(PDF) 2 Page - Vishay Siliconix |
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DG271BDY-E3 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 4 page DG271B Vishay Siliconix www.vishay.com 2 Document Number: 70966 S-42137—Rev. B, 15-Nov-04 ABSOLUTE MAXIMUM RATINGS V+ to V− 44 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . GND to V− 25 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Digital Inputsa VS, VD (V−) −2 V to (V+) +2 V or . . . . . . . . . . . . . . . . . . . . . . . . . 20 mA, whichever occurs first Current, Any Terminal 30 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Peak Current, S or D (Pulsed at 1 ms, 10% duty cycle max) 100 mA . . . . . . . . . . . . . . . . . . . . . . . . . . Storage Temperature (DY Suffix) −65 to 150_C . . . . . . . . . . . . . . . . . . . (CJ Suffix) −65 to 125_C . . . . . . . . . . . . . . . . . . . Power Dissipation (Package)b 16-Pin Plastic DIPc 470 mW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16-Pin Plastic Narrow SOICd 600 mW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Notes: a. Signals on SX, DX, or INX exceeding V+ or V− will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 6.5 mW/_C above 75_C d. Derate 7.6 mW/_C above 75_C Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONSa Test Conditions Unless Specified V 15 V V 15 V C, D Suffix 0 to 70_C −40 to 85_C Parameter Symbol V+ = 15 V, V− = −15 V VIN = 2.4 V, 0.8 Vf Tempb Mind Typc Maxd Unit Analog Switch Analog Signal Rangee VANALOG Full −15 15 V Drain-Source On-Resistance rDS(on) IS = 1 mA, VD = "10 V Room Full 32 50 75 W Switch Off Leakage Current IS(off) VD = "14 V VS = #14 V Room Full −1 −20 "0.05 1 20 Switch Off Leakage Current ID(off) VD = "14 V, VS = #14 V Room Full −1 −20 "0.05 1 20 nA Channel On Leakage Current ID(on) + IS(on) VS = VD = "14 V Room Full −1 −20 "0.05 1 20 Digital Control Input Current with Voltage High IINH VIN = 2 V Full −1 0.010 1 Input Current with Voltage High IINH VIN = 15 V Full −1 0.010 1 mA Input Current with Voltage Low IINL VIN = 0 V Full −1 0.010 1 m Dynamic Characteristics Turn-On Time tON VS = "10 V Room Full 55 65 80 ns Turn-Off Time tOFF VS = "10 V See Figure 3 Room Full 50 65 80 ns Charge Injection Q CL = 1 nF, VS = 0 V Vgen = 0 V, Rgen = 0 W See Figure 3 Room −5 pC Source Off Capacitance CS(off) VS = 0 V, VIN = 5 V Room 8 Drain Off Capacitance CD(off) VS = 0 V, VIN = 5 V f = 1 MHz Room 8 pF Channel On Capacitance CD(on) VD = VS = 0 V, VIN = 0 V Room 30 p Off Isolation OIRR CL = 10 pF, RL = 1 kW f = 100 kHz Room 85 dB Crosstalk XTALK f = 100 kHz See Figures 4 and 5 Room 100 dB Supply Positive Supply Current I+ All Channels On or Off Room Full 5.5 7.5 9 mA Negative Supply Current I− All Channels On or Off VIN = 5 V or 0 V Room Full −6 −8 −3.4 mA Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25_C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. |
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