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M390S6450CT1-C7C Datasheet(PDF) 5 Page - Samsung semiconductor |
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M390S6450CT1-C7C Datasheet(HTML) 5 Page - Samsung semiconductor |
5 / 12 page M390S6450CT1 PC133 Registered DIMM Rev. 0.2 Sept. 2001 ABSOLUTE MAXIMUM RATINGS Parameter Symbol Value Unit Voltage on any pin relative to Vss VIN, VOUT -1.0 ~ 4.6 V Voltage on VDD supply relative to Vss VDD, VDDQ -1.0 ~ 4.6 V Storage temperature TSTG -55 ~ +150 °C Power dissipation PD 18 W Short circuit current IOS 50 mA Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to recommended operating condition. Exposure to higher than recommended voltage for extended periods of time could affect device reliability. Note : DC OPERATING CONDITIONS AND CHARACTERISTICS Recommended operating conditions (Voltage referenced to VSS = 0V, TA = 0 to 70 °C) Parameter Symbol Min Typ Max Unit Note Supply voltage VDD 3.0 3.3 3.6 V Input high voltage VIH 2.0 3.0 VDDQ+0.3 V 1 Input low voltage VIL -0.3 0 0.8 V 2 Output high voltage VOH 2.4 - - V IOH = -2mA Output low voltage VOL - - 0.4 V IOL = 2mA Input leakage current ILI -10 - 10 uA 3 CAPACITANCE (VDD = 3.3V, TA = 23 °C, f = 1MHz, VREF =1.4V ± 200 mV) Parameter Symbol Min Max Unit Input capacitance (A0 ~ A12) Input capacitance (RAS, CAS, WE) Input capacitance (CKE0) Input capacitance (CLK0) Input capacitance (CS0, CS2) Input capacitance (DQM0 ~ DQM7) Input capacitance (BA0 ~ BA1) Data input/output capacitance (DQ0 ~ DQ63) Data input/output capacitance (CB0 ~ CB7) CIN1 CIN2 CIN3 CIN4 CIN5 CIN6 CIN7 COUT COUT1 - - - - - - - - - 15 15 15 20 15 15 15 16 16 pF pF pF pF pF pF pF pF pF 1. VIH (max) = 5.6V AC. The overshoot voltage duration is ≤ 3ns. 2. VIL (min) = -2.0V AC. The undershoot voltage duration is ≤ 3ns. 3. Any input 0V ≤ VIN ≤ VDDQ. Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs. Notes : |
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