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M390S6450CT1-C7C Datasheet(PDF) 5 Page - Samsung semiconductor

Part # M390S6450CT1-C7C
Description  64Mx72 SDRAM DIMM with PLL & Register based on 64Mx4, 4Banks, 8K Ref., 3.3V Synchronous DRAMs with SPD
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

M390S6450CT1-C7C Datasheet(HTML) 5 Page - Samsung semiconductor

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M390S6450CT1
PC133 Registered DIMM
Rev. 0.2 Sept. 2001
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Voltage on any pin relative to Vss
VIN, VOUT
-1.0 ~ 4.6
V
Voltage on VDD supply relative to Vss
VDD, VDDQ
-1.0 ~ 4.6
V
Storage temperature
TSTG
-55 ~ +150
°C
Power dissipation
PD
18
W
Short circuit current
IOS
50
mA
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
Note :
DC OPERATING CONDITIONS AND CHARACTERISTICS
Recommended operating conditions (Voltage referenced to VSS = 0V, TA = 0 to 70
°C)
Parameter
Symbol
Min
Typ
Max
Unit
Note
Supply voltage
VDD
3.0
3.3
3.6
V
Input high voltage
VIH
2.0
3.0
VDDQ+0.3
V
1
Input low voltage
VIL
-0.3
0
0.8
V
2
Output high voltage
VOH
2.4
-
-
V
IOH = -2mA
Output low voltage
VOL
-
-
0.4
V
IOL = 2mA
Input leakage current
ILI
-10
-
10
uA
3
CAPACITANCE (VDD = 3.3V, TA = 23
°C, f = 1MHz, VREF =1.4V ± 200 mV)
Parameter
Symbol
Min
Max
Unit
Input capacitance (A0 ~ A12)
Input capacitance (RAS, CAS, WE)
Input capacitance (CKE0)
Input capacitance (CLK0)
Input capacitance (CS0, CS2)
Input capacitance (DQM0 ~ DQM7)
Input capacitance (BA0 ~ BA1)
Data input/output capacitance (DQ0 ~ DQ63)
Data input/output capacitance (CB0 ~ CB7)
CIN1
CIN2
CIN3
CIN4
CIN5
CIN6
CIN7
COUT
COUT1
-
-
-
-
-
-
-
-
-
15
15
15
20
15
15
15
16
16
pF
pF
pF
pF
pF
pF
pF
pF
pF
1. VIH (max) = 5.6V AC. The overshoot voltage duration is
≤ 3ns.
2. VIL (min) = -2.0V AC. The undershoot voltage duration is
≤ 3ns.
3. Any input 0V
≤ VIN ≤ VDDQ.
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
Notes :


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