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IGP30N60T Datasheet(PDF) 1 Page - Infineon Technologies AG |
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IGP30N60T Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 12 page IGP30N60T TrenchStop Series IGW30N60T Power Semiconductors 1 Rev. 2.2 Dec-04 Low Loss IGBT in Trench and Fieldstop technology • Very low VCE(sat) 1.5 V (typ.) • Maximum Junction Temperature 175 °C • Short circuit withstand time – 5 µs • Designed for : - Frequency Converters - Uninterruptible Power Supply • Trench and Fieldstop technology for 600 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed - low VCE(sat) • Positive temperature coefficient in VCE(sat) • Low EMI • Low Gate Charge • Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type VCE IC VCE(sat),Tj=25°C Tj,max Marking Code Package Ordering Code IGP30N60T 600V 30A 1.5V 175 °C G30T60 TO-220 Q67040S4722 IGW30N60T 600V 30A 1.5V 175 °C G30T60 TO-247 Q67040S4724 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCE 600 V DC collector current, limited by Tjmax TC = 25 °C TC = 100 °C IC 60 30 Pulsed collector current, tp limited by Tjmax ICpuls 90 Turn off safe operating area (VCE ≤ 600V, Tj ≤ 175°C) - 90 A Gate-emitter voltage VGE ±20 V Short circuit withstand time 1) VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C tSC 5 µs Power dissipation TC = 25 °C Ptot 187 W Operating junction temperature Tj -40...+175 Storage temperature Tstg -55...+175 Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260 °C 1) Allowed number of short circuits: <1000; time between short circuits: >1s. P-TO-247-3-1 (TO-220AC) P-TO-220-3-1 (TO-220AB) G C E |
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