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STTHR5R06B-TR Datasheet(PDF) 4 Page - STMicroelectronics |
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STTHR5R06B-TR Datasheet(HTML) 4 Page - STMicroelectronics |
4 / 9 page STTH5R06 4/9 Figure 9: Relative variations of dynamic parameters versus junction temperature Figure 10: Transient peak forward voltage versus dIF/dt (90% confidence) Figure 11: Forward recovery time versus dIF/dt (90% confidence) Figure 12: Junction capacitance versus reverse voltage applied (typical values) Figure 13: Thermal resistance junction to ambient versus copper surface under tab (epoxy FR4, eCU=35µm) (DPAK and D 2PAK) 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 25 50 75 100 125 IRM QRR S factor T (°C) j I=I Reference: T =125°C FF(AV) j V =400V R 0 2 4 6 8 10 12 14 16 18 20 0 100 200 300 400 500 V (V) FP dI /dt(A/µs) F I=I T =125°C FF(AV) j 0 20 40 60 80 100 120 0 100 200 300 400 500 t (ns) fr dI /dt(A/µs) F I=I T =125°C FF(AV) j V =1.1 x V max. FR F 10 100 1 10 100 1000 C(pF) V (V) R F=1MHz V =30mV T =25°C OSC RMS j 0 10 20 30 40 50 60 70 80 90 100 02468 10 12 14 16 18 20 S(Cu)(cm²) R (°C/W) th(j-a) |
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