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BC489B Datasheet(PDF) 1 Page - ON Semiconductor |
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BC489B Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 6 page 1 Motorola Small–Signal Transistors, FETs and Diodes Device Data High Current Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 80 Vdc Collector – Base Voltage VCBO 80 Vdc Emitter – Base Voltage VEBO 5.0 Vdc Collector Current — Continuous IC 0.5 Adc Total Device Dissipation @ TA = 25°C Derate above 25 °C PD 625 5.0 mW mW/ °C Total Device Dissipation @ TC = 25°C Derate above 25 °C PD 1.5 12 Watt mW/ °C Operating and Storage Junction Temperature Range TJ, Tstg – 55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage(1) (IC = 10 mAdc, IB = 0) V(BR)CEO 80 — — Vdc Collector – Base Breakdown Voltage (IC = 100 mAdc, IE = 0) V(BR)CBO 80 — — Vdc Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 5.0 — — Vdc Collector Cutoff Current (VCB = 60 Vdc, IE = 0) ICBO — — 100 nAdc ON CHARACTERISTICS* DC Current Gain (IC = 10 mAdc, VCE = 2.0 Vdc) (IC = 100 mAdc, VCE = 2.0 Vdc) BC489 BC489A BC489B (IC = 1.0 Adc, VCE = 5.0 Vdc)* hFE 40 60 100 160 15 — — 160 260 — — 400 250 400 — — 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2%. Order this document by BC489/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA BC489,A,B CASE 29–04, STYLE 17 TO–92 (TO–226AA) 1 2 3 © Motorola, Inc. 1996 COLLECTOR 1 2 BASE 3 EMITTER |
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