SAMWIN
SW2N60
REV0.2
04.11.1
2/6
Electrical Characteristics (Tc=25℃ unless otherwise noted)
Value
Symbol
Parameter
Test Conditions
Min
Typ
Max
Off Characteristics
BV
DSS
Drain- Source Breakdown Voltage
V
GS=0V,ID=250uA
600
-
-
V
△BV
DSS/△
Tj
Breakdown Voltage Temperature
coefficient
I
D=250uA,referenced to 25℃
-0.17-
V/℃
V
DS=600V, VGS=0V
I
DSS
Drain-Source Leakage Current
V
DS=480V, Tc=125℃
--
1
uA
Gate-Source Leakage Current
V
GS=30V,VDS=0V
-
-
100
nA
Gate-Source Leakage Reverse
V
GS=-30V, VDS=0V
-
-
-100
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS=VGS,ID=250uA
2.0
-
4.0
V
R
DS(ON)
Static Drain-Source On-state
Resistance
V
GS=10V,ID=0.9A
-
-
5
ohm
Dynamic Characteristics
Ciss
Input Capacitance
-
-
* 520
Coss
Output Capacitance
-
-
50
Crss
Reverse Transfer Capacitance
-
-
11
Dynamic Characteristics
t
d(on)
Turn-on Delay Time
-
-
* 60
t
r
Rise Time
-
-
* 94
t
d(off)
Turn-off Delay Time
-
-
* 140
t
f
Fall Time
-
-
* 74
Q
g
Total Gate Charge
-
-
20
Q
gs
Gate-Source Charge
-
3
-
Q
gd
Gate-Drain Charge (Miller Charge)
-
5
-
nc
V
DS=480V,VGS=10V, ID=1.8A
(Note4,5)
ns
V
DD=300V,ID=1.8A
R
G=50ohm
(Note4,5)
pF
V
GS=0V,VDS=25V, f=1MHz
I
GSS
Units
Source-Drain Diode Ratings and Characteristics
MAX
TYP
MIN
uc
-
1.5
-
Reverse Recovery Charge
Q
rr
ns
-
250
-
I
S=1.8A,VGS=0V,
dI
F/dt=100A/us
Reverse Recovery Time
t
rr
V
1.5
-
-
I
S=1.8A,VGS=0V
Diode Forward Voltage
V
SD
7.2
8.0
Pulsed Source Current
I
SM
A
1.8
2.0
Integral Reverse
p-n Junction Diode
in the MOSFET
Continuous Source Current
I
S
Unit.
TO-251(2)
TO-220
Test Conditions
Parameter
Symbol
※NOTES
1. Repeativity rating: pulse width limited by junction temperature
2. L=62.2mH,I
AS=1.8A,VDD=50V,RG=0ohm, Starting TJ=25℃
3. ISD≤1.8A,di/dt≤100A/us,V
DD≤BVDSS, Starting TJ=25℃
4. Pulse Test: Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
6. The Max data with “*” will be reduce soon.