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K9F2816Q0C-HIB0 Datasheet(PDF) 7 Page - Samsung semiconductor

Part # K9F2816Q0C-HIB0
Description  16M x 8 Bit NAND Flash Memory
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K9F2816Q0C-HIB0 Datasheet(HTML) 7 Page - Samsung semiconductor

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FLASH MEMORY
7
K9F2808U0C
512Byte
16 Byte
Figure 1-1. K9F2808U0C FUNCTIONAL BLOCK DIAGRAM
Figure 2-1. K9F2808U0C ARRAY ORGANIZATION
NOTE : Column Address : Starting Address of the Register.
00h Command(Read) : Defines the starting address of the 1st half of the register.
01h Command(Read) : Defines the starting address of the 2nd half of the register.
* A8 is set to "Low" or "High" by the 00h or 01h Command.
* The device ignores any additional input of address cycles than reguired.
* L must be set to "Low".
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
1st Cycle
A0
A1
A2
A3
A4
A5
A6
A7
2nd Cycle
A9
A10
A11
A12
A13
A14
A15
A16
3rd Cycle
A17
A18
A19
A20
A21
A22
A23
L*
VCC
X-Buffers
128M + 4M Bit
Command
NAND Flash
ARRAY
(512 + 16)Byte x 32768
Y-Gating
Page Register & S/A
I/O Buffers & Latches
Latches
& Decoders
Y-Buffers
Latches
& Decoders
Register
Control Logic
& High Voltage
Generator
Global Buffers
Output
Driver
VSS
A9 - A23
A0 - A7
Command
CE
RE
WE
WP
I/0 0
I/0 7
VCC/VCCQ
VSS
A8
1st half Page Register
(=256 Bytes)
2nd half Page Register
(=256 Bytes)
32K Pages
(=1,024 Blocks)
512 Byte
8 bit
16 Byte
1 Block =32 Pages
= (16K + 512) Byte
I/O 0 ~ I/O 7
1 Page = 528 Byte
1 Block = 528 Byte x 32 Pages
= (16K + 512) Byte
1 Device = 528Bytes x 32Pages x 1024 Blocks
= 132 Mbits
Column Address
Row Address
(Page Address)
Page Register
CLE ALE


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