128Mb: x4, x8, x16
SDRAM 3.3V
PDF: 09005aef807827f6 / Source: 09005aef807825bd
128Mb SDRAM
Rev: 11/29/2004
3
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ICC OPERATING CONDITIONS AND MAXIMUM LIMITS: Vdd = 3.3V
± 10%V, Temp. = 25° to 70 °C
Supply Current
Symbol
-75A
-8A
Units
Notes
OPERATING CURRENT: ACTIVE mode, burst = 1, READ or WRITE, tRC > tRC
(MIN), one bank active, CL=3
Icc1
165
140
mA
1, 2, 3, 4
Standard parts
Idd2
9
9
mA
32
STANDBY CURRENT: POWER-DOWN mode, CKE = LOW,
no accesses in progress
Self refresh parts
Idd2
3
3
mA
32
STANDBY CURRENT: CS# = HIGH, CKE = HIGH, all banks idle
Icc3
75
60
mA
1, 2, 3, 4
STANDBY CURRENT: CS# = HIGH, CKE = HIGH, all banks active after tRCD met,
no accesses in progress.
Icc4
75
50
mA
1, 2, 3, 4
OPERATING CURRENT: BURST mode after tRCD met, continuous burst, READ,
WRITE, all banks active, CL=3
Icc5
165
145
mA
1, 2, 3, 4
AUTO REFRESH CURRENT tRC > tRC (MIN)
CL = 3
Icc6
265
245
mA
1, 2, 3, 4
AUTO REFRESH CURRENT tRC=15.6us
CL = 3
Icc7
50
50
mA
1, 2, 3, 4
SELF REFRESH CURRENT (Self refresh parts only, part M)
Idd8
3
3
mA
Notes
1.
All voltages referenced to Vss.
2.
An initial pause of 100
µs is required after power-up, followed by two AUTO REFRESH commands, before proper device operation
is ensure. (Vdd and VddQ must be powered-up simultaneously Vss and VssQ must be at the same potential.) The two AUTO
REFRESH command wake-ups should be repeated any time the
tREF refresh requirement is exceeded.
3.
Icc specifications are tested after the device is properly initialized. tCK= 10ns for –8 and tCK=7.5ns for –75A.