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NTD3055-150T4G Datasheet(PDF) 1 Page - ON Semiconductor |
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NTD3055-150T4G Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 8 page © Semiconductor Components Industries, LLC, 2004 August, 2004 − Rev. 4 1 Publication Order Number: NTD3055−150/D NTD3055−150 Power MOSFET 9.0 A, 60 V N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Packages are Available Typical Applications • Power Supplies • Converters • Power Motor Controls • Bridge Circuits MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage VDSS 60 Vdc Drain−to−Gate Voltage (RGS = 10 MW) VDGR 60 Vdc Gate−to−Source Voltage − Continuous − Non−repetitive (tpv10 ms) VGS VGS "20 "30 Vdc Drain Current − Continuous @ TA = 25°C − Continuous @ TA = 100°C − Single Pulse (tpv10 ms) ID ID IDM 9.0 3.0 27 Adc Apk Total Power Dissipation @ TA = 25°C Derate above 25 °C Total Power Dissipation @ TA = 25°C (Note 1) Total Power Dissipation @ TA = 25°C (Note 2) PD 28.8 0.19 2.1 1.5 W W/ °C W W Operating and Storage Temperature Range TJ, Tstg − 55 to 175 °C Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, L = 1.0 mH, IL(pk) = 7.75 A, VDS = 60 Vdc) EAS 30 mJ Thermal Resistance − Junction−to−Case − Junction−to−Ambient (Note 1) − Junction−to−Ambient (Note 2) RqJC RqJA RqJA 5.2 71.4 100 °C/W Maximum Lead Temperature for Soldering Purposes, 1/8 ″ from case for 10 seconds TL 260 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. When surface mounted to an FR4 board using 0.5 sq in pad size. 2. When surface mounted to an FR4 board using minimum recommended pad size. 9.0 AMPERES, 60 VOLTS RDS(on) = 122 mW (Typ) N−Channel D S G 1 Gate 3 Source 2 Drain 4 Drain DPAK CASE 369C STYLE 2 “SURFACE MOUNT” MARKING DIAGRAMS 1 2 3 4 1 Gate 3 Source 2 Drain 4 Drain DPAK−3 CASE 369D STYLE 2 “STRAIGHT LEAD” 1 2 3 4 See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. ORDERING INFORMATION 3150 Device Code A = Assembly Location Y = Year W = Work Week http://onsemi.com |
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