3

ATF-58143 Electrical Specifications

Symbol

Parameter and Test Condition

Units

Min.

Max.

Vgs

Operational Gate Voltage

Vds = 3V, Ids = 30 mA

V

0.4

0.51

0.75

Vth

Threshold Voltage

Vds = 3V, Ids = 4 mA

V

0.18

0.38

0.52

Idss

Saturated Drain Current

Vds = 3V, Vgs = 0V

µA—

1

5

Gm

Transconductance

Vds = 3V, gm =

∆Idss/∆Vgs;

mmho

230

410

560

∆Vgs = 0.75 – 0.7 = 0.05V

Igss

Gate Leakage Current

Vgd = Vgs = -3V

µA

—

—

200

NF

f = 2 GHz

Vds = 3V, Ids = 30 mA

dB

—

0.5

0.9

f = 900 MHz

Vds = 3V, Ids = 30 mA

dB

—

0.3

—

f = 2 GHz

Vds = 4V, Ids = 30 mA

dB

—

0.5

—

f = 900 MHz

Vds = 4V, Ids = 30 mA

dB

—

0.3

—

Ga

f = 2 GHz

Vds = 3V, Ids = 30 mA

dB

15

16.5

18.5

f = 900 MHz

Vds = 3V, Ids = 30 mA

dB

—

23.1

—

f = 2 GHz

Vds = 4V, Ids = 30 mA

dB

—

17.7

—

f = 900 MHz

Vds = 4V, Ids = 30 mA

dB

—

22.5

—

OIP3

f = 2 GHz

Vds = 3V, Ids = 30 mA

dBm

29

30.5

—

f = 900 MHz

Vds = 3V, Ids = 30 mA

dBm

—

28.6

—

f = 2 GHz

Vds = 4V, Ids = 30 mA

dBm

—

31.5

—

f = 900 MHz

Vds = 4V, Ids = 30 mA

dBm

—

31.0

—

P1dB

1dB Compressed

f = 2 GHz

Vds = 3V, Ids = 30 mA

dBm

—

19

—

f = 900 MHz

Vds = 3V, Ids = 30 mA

dBm

—

18

—

f = 2 GHz

Vds = 4V, Ids = 30 mA

dBm

—

21

—

f = 900 MHz

Vds = 4V, Ids = 30 mA

dBm

—

19

—

Notes:

1. Measurements obtained using production test board described in Figure 5.

2. Typical values determined from a sample size of 500 parts from 3 wafers.

Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Associated Gain,

P1dB and OIP3 measurements. This circuit represents a trade-off between an optimal noise

match and associated impedance matching circuit losses.

RFin

RFout

output

matching

0.7 dB loss

input

matching

0.6 dB loss

28.2 + j9.4

51 – j3.3