MP6404 datasheet(8/11 Pages) TOSHIBA

Part #	MP6404

Description	TOSHIBA Power MOS FET Module Silicon N&P Channel MOS Type

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Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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8 / 11 page

MP6404

2004-07-01

8

Pch MOS FET

Drain-source voltage VDS (V)

Capacitance – VDS

Case temperature Tc (°C)

RDS (ON) – Tc

Drain-source voltage VDS (V)

IDR – VDS

Total gate charge Qg (nC)

Dynamic Input/Output Characteristics

Case temperature Tc (°C)

Vth – Tc

0

−80

ID = −5, −2.5, −1.2 A

−2.5

−1.2

VGS = −4 V

−40

0

40

80

120

160

0.2

0.4

0.6

0.8

1.0

Common source

ID = −5 A

VGS = −10 V

Common source

Tc = 25°C

−0.1

0

0.4

0.8

1.2

1.6

2.0

−0.3

−0.5

−1

−3

−5

−10

−30

VGS = 0, 1 V

−10

−3

−1

0

−80

Common source

VDS = −10 V

ID = −1 mA

−40

0

40

80

120

160

−0.4

−0.8

−1.2

−1.6

−2.0

0

−10

−20

−30

−40

−50

8

16

24

32

40

0

−4

−8

−12

−16

−20

VDD = −48 V

−12

−24

VDS

VGS

Common source

ID = −5 A

Tc = 25°C

30

−0.1

−0.3

−1

−3

−10

−30

−100

50

100

300

500

1000

3000

5000

Common source

VGS = 0 V

f = 1MHz

Tc = 25°C

Ciss

Coss

Crss

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