Complementary Silicon Plastic

Power Transistors

. . . designed for use in general–purpose amplifier and switching

applications.

hFE = 20–150 @ IC = 5.0 Adc

= 5.0 (Min) @ IC = 15 Adc

VCEO(sus) = 60 Vdc (Min) – 2N6487, 2N6490

= 80 Vdc (Min) – 2N6488, 2N6491

fT = 5.0 MHz (Min) @ IC = 1.0 Adc

MAXIMUM RATINGS (1)

Rating

Symbol

2N6487

2N6490

2N6488

2N6491

Unit

Collector–Emitter Voltage

VCEO

60

80

Vdc

Collector–Base Voltage

VCB

70

90

Vdc

Emitter–Base Voltage

VEB

5.0

Vdc

Collector Current — Continuous

IC

15

Adc

Base Current

IB

5.0

Adc

Total Power Dissipation @ TC = 25_C

Derate above 25

_C

PD

75

0.6

Watts

W/

_C

Total Power Dissipation @ TA = 25_C

Derate above 25

_C

PD

1.8

0.014

Watts

W/

_C

Operating and Storage Junction

Temperature Range

TJ, Tstg

–65 to +150

_C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

R

θJC

1.67

_C/W

Thermal Resistance, Junction to Ambient

R

θJA

70

_C/W

(1) Indicates JEDEC Registered Data.

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

© Semiconductor Components Industries, LLC, 2002

April, 2002 – Rev. 10

1

Publication Order Number:

2N6487/D

2N6487

2N6488

2N6490

2N6491

*ON Semiconductor Preferred Device

15 AMPERE

COMPLEMENTARY

SILICON

POWER TRANSISTORS

60–80 VOLTS

75 WATTS

*

*

CASE 221A–09

TO–220AB

NPN

PNP

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

1

2

3

4