2N6426 datasheet(1/6 Pages) ONSEMI

Part #	2N6426

Description	Darlington Transistors(NPN Silicon)

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Darlington Transistors

NPN Silicon

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

VCEO

40

Vdc

Collector–Base Voltage

VCBO

40

Vdc

Emitter–Base Voltage

VEBO

12

Vdc

Collector Current — Continuous

IC

500

mAdc

Total Device Dissipation @ TA = 25°C

Derate above 25

°C

PD

625

5.0

mW

mW/

°C

Total Device Dissipation @ TC = 25°C

Derate above 25

°C

PD

1.5

12

Watts

mW/

°C

Operating and Storage Junction

Temperature Range

TJ, Tstg

–55 to +150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Ambient

RqJA

200

°C/W

Thermal Resistance, Junction to Case

RqJC

83.3

°C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage (1)

(IC = 10 mAdc, VBE = 0)

V(BR)CEO

40

—

Vdc

Collector–Base Breakdown Voltage

(IC = 100 mAdc, IE = 0)

V(BR)CBO

40

—

Vdc

Emitter–Base Breakdown Voltage

(IE = 10 mAdc, IC = 0)

V(BR)EBO

12

—

Vdc

Collector Cutoff Current

(VCE = 25 Vdc, IB = 0)

ICES

—

1.0

mAdc

Collector Cutoff Current

(VCB= 30 Vdc, IE = 0)

ICBO

—

50

nAdc

Emitter Cutoff Current

(VEB= 10 Vdc, IC = 0)

IEBO

—

50

nAdc

1. Pulse Test: Pulse Width

v 300 ms; Duty Cycle v 2.0%.

ON Semiconductort

February, 2001 – Rev.1

1

Publication Order Number:

2N6426/D

2N6426

2N6427

*ON Semiconductor Preferred Device

CASE 29–04, STYLE 1

TO–92 (TO–226AA)

*

1

2

3

COLLECTOR 3

BASE

2

EMITTER 1

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