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B-8
L-51ROPT1XX 5.0mm PHOTOTRANSISTOR
L-51ROPT1XX
D1,D2=BLACK
1.All dimension are in millimeters (inches).
2.Tolerance is
0.25 mm (0.01") unless otherwise specified.
Part No.
PD (mw)
ABSOLUTE MAXIMUN RATING:(
Ta=25ºC)
V(BR)R (V)
Topr
Tstg
PARAMETER
Power Dissipation
Reverse break down
voltage
Operating Temperature
Range
Storage Temperature
Range
10
5
-35ºC to 85ºC
-35ºC to 85ºC
Lead Soldering Temperature {1.6mm(0.063 inch)From Body}250ºC
5ºC For 3 Seconds
ELECTRO-OPTICAL CHARACTERISTICS:(Ta=25ºC)
Part No.
BVCEO (V)
BVECO (V)
ICEO (nA)
VCE(s) (V)
tR/t
F (uS)
lC (mA)
CCB (pF)
(nm)
MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN PEAK MAX
TEST
CONDITION
PARAMETER
L-51ROPT1C
30
5
100
0.4
15/15
1.8 2.4
6.4
400
1050
L-51ROPT1D1 30
5
100
0.4
15/15
1.7 2.2
6.4
900 940
L-51ROPT1D2 30
5
100
0.4
15/15
1.7 2.2
6.4
800 870
IC=100uA
Ee=0mW/cm
2
IE=100uA
Ee=0mW/cm
2
VE=20V
Ee=0mW/cm
2
IC=2mA
Ee=0.5mW/cm
2
VCE=5V
IC=1mA
RL=1000
f=1MHZ
VCB=3V
Ee=0mW/cm
2
COLLECTOR
DARK
CURRENT
RISE/FALL
TIME
SPECTRAL
SENSITIVITY
WAVELENGTH
VCE=5V
Ee=0.1mW/cm
2
COLLECTOR
-BASE
CAPACITANCE
ON STATE
COLLECTOR
CURRENT
COLLECTOR-
EMITTER
SATURATION
VOLTAGE
EMITTER-
COLLECTOR
BREAKDOWN
VOLTAGE
COLLECTOR-
EMITTER
BREAKDOWN
VOLTAGE