NTHS5441T1 datasheet(3/6 Pages) ONSEMI

Part #	NTHS5441T1

Description	??0 V, ??.3 A, P?묬hannel ChipFET

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NTHS5441

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TYPICAL ELECTRICAL CHARACTERISTICS

125

°C

−2.5 V

0

20

2.5

16

12

3

1.5

1

−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

8

4

0

0.5

Figure 1. On−Region Characteristics

0

20

16

1.5

12

8

4

0.5

0

2.5

3

Figure 2. Transfer Characteristics

−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

0

0.05

24

0.15

0.1

0

5

Figure 3. On−Resistance versus

Gate−to−Source Voltage

−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

218

20

14

10

0.15

0.1

6

0.05

Figure 4. On−Resistance versus Drain Current

and Gate Voltage

−ID, DRAIN CURRENT (AMPS)

−50

0

−25

25

1.4

1.2

1

0.8

0.6

50

125

100

Figure 5. On−Resistance Variation with

Temperature

TJ, JUNCTION TEMPERATURE (°C)

TJ = 25°C

VGS = −1.5 V

0.2

13

TJ = −55°C

ID = −3.9 A

TJ = 25°C

0.2

0

75

150

TJ = 25°C

VGS = 2.5 V

ID = −3.9 A

VGS = −4.5 V

2

−2 V

−3 V

−3.5 V

−5 V

−4.5 V

−4 V

25

°C

1.6

VGS = 3.6 V

VGS = 4.5 V

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