NTHS5441 datasheet(4/6 Pages) ONSEMI

Part #	NTHS5441

Description	??0 V, ??.3 A, P?묬hannel ChipFET

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NTHS5441

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TYPICAL ELECTRICAL CHARACTERISTICS

812

4

016

1200

900

600

300

0

20

−VDS, DRAIN−TO−SOURCE VOLTAGE ()

Figure 6. Capacitance Variation

Figure 7. Gate−to−Source and

Drain−to−Source Voltage versus Total Charge

QG, TOTAL GATE CHARGE (nC)

TJ = 25°C

VGS = 0

Coss

Ciss

Crss

1500

0

1

2

3

4

5

0

1

23

4

5

67

89

10

0

1

2

3

4

5

6

7

8

9

10

11

QG

QGD

QGS

ID = −3.9 A

TJ = 25°C

QGD/QGS = 3.0

0.0001

1

0.01

10

0.1

0.01

SQUARE WAVE PULSE DURATION (sec)

0.1

1

0.001

Figure 8. Normalized Thermal Transient Impedance, Junction−to−Ambient

Duty Cycle = 0.5

100

1000

0.2

Single Pulse

0.1

0.05

0.02

PER UNIT BASE = RqJA = 80°C/W

TJM − TA = PDMZqJA(t)

SURFACE MOUNTED

PDM

t1

t2

DUTY CYCLE, D = t1/t2

Figure 9. Diode Forward Voltage versus

Current

0.3

0.1

0.5

0.7

0.9

5

3

2

1

0

−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

VGS = 0 V

TJ = 25°C

4

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