ILD610 datasheet(2/8 Pages) VISHAY

Part #	ILD610

Description	Optocoupler, Phototransistor Output, Dual Channel

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number 83651

Rev. 1.6, 26-Oct-04

VISHAY

ILD610

Vishay Semiconductors

Output

Coupler

Electrical Characteristics

Tamb = 25 °C, unless otherwise specified

Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering

evaluation. Typical values are for information only and are not part of the testing requirements.

Input

Output

Coupler

Parameter

Test condition

Symbol

Value

Unit

Collector-emitter voltage

VCE

70

V

Collector current

IC

50

mA

t

≤ 1.0 ms

IC

100

mA

Power dissipation

Pdiss

150

mW

Derate linearly from 25 °C

2.0

mW/°C

Parameter

Test condition

Symbol

Value

Unit

Isolation test voltage

t = 1.0 sec.

VISO

5300

VRMS

Isolation resistance

VIO = 500 V, Tamb = 25 °C

RIO

≥ 1012

Ω

VIO = 500 V,Tamb = 100 °C

RIO

≥ 1011

Ω

Storage temperature

Tstg

- 55 to + 150

°C

Operating temperature

Tamb

- 55 to + 100

°C

Junction temperature

Tj

100

°C

Lead soldering time at 260 °C

10

sec.

Parameter

Test condition

Symbol

Min

Typ.

Max

Unit

Forward voltage

IF = 60 mA

VF

1.25

1.65

V

Reverse current

VR = 6.0 V

IR

0.01

10

µA

Capacitance

VR = 0 V, f = 1.0 MHz

CO

25

pF

Parameter

Test condition

Part

Symbol

Min

Typ.

Max

Unit

Collector-emitter breakdown

voltage

IC = 10 mA, IE = 10 µABVCEO

70

90

V

BVCEO

6.0

7.0

V

Collector-emitter dark current

VCE = 10 V

ICEO

2.0

50

nA

Collector-emitter capacitance

VCE = 5.0 V, f = 1.0 MHz

CCE

7.0

pF

Collector-emitter leakage

current

VCE = 10 V

ILD610-1

ICEO

2.0

50

nA

ILD610-2

ICEO

2.0

50

nA

ILD610-3

ICEO

5.0

100

nA

ILD610-4

ICEO

5.0

100

nA

Parameter

Test condition

Symbol

Min

Typ.

Max

Unit

Collector-emitter saturation

voltage

IF = 10 mA, IC = 2.5 mA

VCEsat

0.25

0.40

V

Coupling capacitance

CC

0.35

pF

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