2N5551 datasheet(4/6 Pages) ONSEMI

Part #	2N5551

Description	mplifier Transistors(NPN Silicon)

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2N5550, 2N5551

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4

Figure 2. Collector Saturation Region

IB, BASE CURRENT (mA)

1.0

IC = 1.0 mA

0

0.3

0.005

0.01

0.2

0.5

1.0

2.0

20

50

0.8

0.5

0.4

0.9

0.7

0.6

0.2

0.02

0.05

0.1

10

0.1

10 mA

30 mA

100 mA

5.0

Figure 3. Collector Cut−Off Region

IC, COLLECTOR CURRENT (mA)

1.0

IC, COLLECTOR CURRENT (mA)

1.0

2.0

5.0

10

20

50

2.5

100

TJ = 25°C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

qVC for VCE(sat)

qVB for VBE(sat)

0.1

0.2

0.5

Figure 4. “On” Voltages

VBE, BASE−EMITTER VOLTAGE (VOLTS)

101

10−5

Figure 5. Temperature Coefficients

TJ = −55°C to +135°C

0.4

0.3

0.1

0.8

0.6

0.4

0.2

0

100

10−1

10−2

10−3

10−4

0.2

0

0.1

0.2

0.4

0.3

0.6

0.5

VCE = 30 V

TJ = 125°C

75°C

25°C

IC = ICES

3.0

30

2.0

1.5

1.0

0.5

0

− 0.5

− 1.0

− 1.5

− 2.0

− 2.5

REVERSE

FORWARD

0.3

1.0

2.0

5.0

10

20

50

100

0.1

0.2

0.5

3.0

30

0.3

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