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KM736V687A Datasheet(PDF) 6 Page - Samsung semiconductor

Part # KM736V687A
Description  64Kx36 Synchronous SRAM
Download  16 Pages
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KM736V687A Datasheet(HTML) 6 Page - Samsung semiconductor

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KM736V687A
64Kx36 Synchronous SRAM
- 6 -
Rev 3.0
December 1998
CAPACITANCE*(TA=25
°C, f=1MHz)
*Note : Sampled not 100% tested.
PARAMETER
SYMBOL
TEST CONDITION
MIN
MAX
UNIT
Input Capacitance
CIN
VIN=0V
-
5
pF
Output Capacitance
COUT
VOUT=0V
-
7
pF
ABSOLUTE MAXIMUM RATINGS*
*Notes : Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
PARAMETER
SYMBOL
RATING
UNIT
Voltage on VDD Supply Relative to VSS
VDD
-0.3 to 4.6
V
Voltage on VDDQ Supply Relative to VSS
VDDQ
VDD
V
Voltage on Input Pin Relative to VSS
VIN
-0.3 to 6.0
V
Voltage on I/O Pin Relative to VSS
VIO
-0.3 to VDDQ + 0.5
V
Power Dissipation
PD
1.2
W
Storage Temperature
TSTG
-65 to 150
°C
Operating Temperature
TOPR
0 to 70
°C
Storage Temperature Range Under Bias
TBIAS
-10 to 85
°C
OPERATING CONDITIONS at 3.3V I/O (0
°C≤ TA≤70°C)
PARAMETER
SYMBOL
MIN
Typ.
MAX
UNIT
Supply Voltage
VDD
3.135
3.3
3.6
V
VDDQ
3.135
3.3
3.6
V
Ground
VSS
0
0
0
V
OPERATING CONDITIONS at 2.5V I/O(0
°C ≤ TA ≤ 70°C)
PARAMETER
SYMBOL
MIN
Typ.
MAX
UNIT
Supply Voltage
VDD
3.135
3.3
3.6
V
VDDQ
2.375
2.5
2.9
V
Ground
VSS
0
0
0
V


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