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2N5401 Datasheet(PDF) 1 Page - Motorola, Inc

Part # 2N5401
Description  Amplifier Transistor(PNP Silicon)
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Manufacturer  MOTOROLA [Motorola, Inc]
Direct Link  http://www.freescale.com
Logo MOTOROLA - Motorola, Inc

2N5401 Datasheet(HTML) 1 Page - Motorola, Inc

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Motorola Small–Signal Transistors, FETs and Diodes Device Data
Amplifier Transistors
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
2N5400
2N5401
Unit
Collector – Emitter Voltage
VCEO
120
150
Vdc
Collector – Base Voltage
VCBO
130
160
Vdc
Emitter – Base Voltage
VEBO
5.0
Vdc
Collector Current — Continuous
IC
600
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25
°C
PD
625
5.0
mW
mW/
°C
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
1.5
12
Watts
mW/
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
200
°C/W
Thermal Resistance, Junction to Case
RqJC
83.3
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
2N5400
2N5401
V(BR)CEO
120
150
Vdc
Collector – Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
2N5400
2N5401
V(BR)CBO
130
160
Vdc
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
5.0
Vdc
Collector Cutoff Current
(VCB = 100 Vdc, IE = 0)
2N5400
(VCB = 120 Vdc, IE = 0)
2N5401
(VCB = 100 Vdc, IE = 0, TA = 100°C)
2N5400
(VCB = 120 Vdc, IE = 0, TA = 100°C)
2N5401
ICBO
100
50
100
50
nAdc
µAdc
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
IEBO
50
nAdc
1. Pulse Test: Pulse Width = 300
ms, Duty Cycle = 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by 2N5400/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
2N5400
2N5401
*Motorola Preferred Device
*
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
1
2
3
© Motorola, Inc. 1996
COLLECTOR
3
2
BASE
1
EMITTER


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