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LMH6628WG-QML Datasheet(PDF) 3 Page - National Semiconductor (TI) |
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LMH6628WG-QML Datasheet(HTML) 3 Page - National Semiconductor (TI) |
3 / 12 page MICROCIRCUIT DATA SHEET MNLMH6628-X-RH REV 0A0 (Absolute Maximum Ratings) (Note 1) Supply Voltage +7V dc Maximum Junction temperature (Note 2) +175 C Lead temperature +300 C Soldering, 10 seconds Differential input voltage V+ - V- Common mode input voltage V+ - V- Storage temperature range -65 C < Ta < +150 C Power Dissipation (Note 2) 1.0W Short circuit current (Note 3) Thermal Resistance ThetaJA 135 C/W Ceramic DIP (Still Air) 75 C/W (500LF/Min Air Flow) 200 C/W Ceramic SOIC (Still Air) 145 C/W (500LF/Min Air Flow) ThetaJC 30 C/W Ceramic DIP 19 C/W Ceramic SOIC Package Weight (typical) TBD Ceramic DIP TBD Ceramic SOIC ESD Tolerance (Note 4) 4000V Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is intended to be functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test conditions. Note 2: The maximum power dissipation must be derated at elevated temperatures and is dictated by Tjmax (maximum junction temperature), ThetaJA (package junction to ambient thermal resistance), and TA (ambient temperatuer). The maximum allowable power dissipation at any temperatuer is Pdmax = (Tjmax -TA) / ThetaJA or the number given in the Absoulute Maximum Ratings, whichever is lower. Note 3: Output is short circuit protected to ground, however maximum reliability is obtained if output current does not exceed 160mA. Note 4: Human body model, 1.5k Ohms in series with 100pF. 3 |
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