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2N5209 Datasheet(PDF) 2 Page - ON Semiconductor

Part # 2N5209
Description  Amplifier Transistors(NPN Silicon)
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

2N5209 Datasheet(HTML) 2 Page - ON Semiconductor

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2N5209 2N5210
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 100 µAdc, VCE = 5.0 Vdc)
2N5209
2N5210
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
2N5209
2N5210
(IC = 10 mAdc, VCE = 5.0 Vdc)(1)
2N5209
2N5210
hFE
100
200
150
250
150
250
300
600
Collector – Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
VCE(sat)
0.7
Vdc
Base – Emitter On Voltage
(IC = 1.0 mAdc, VCE = 5.0 mAdc)
VBE(on)
0.85
Vdc
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = 500 µAdc, VCE = 5.0 Vdc, f = 20 MHz)
fT
30
MHz
Collector–Base Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Ccb
4.0
pF
Small–Signal Current Gain
(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)
2N5209
2N5210
hfe
150
250
600
900
Noise Figure
(IC = 20 µAdc, VCE = 5.0 Vdc, RS = 22 kΩ,
2N5209
f = 1.0 kHz)
2N5210
(IC = 20 µAdc, VCE = 5.0 Vdc, RS = 10 kΩ,
2N5209
f = 1.0 kHz)
2N5210
NF
3.0
2.0
4.0
3.0
dB
1. Pulse Test: Pulse Width = 300
ms, Duty Cycle = 2.0%.
RS
in
en
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model


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