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AF9478PD Datasheet(PDF) 2 Page - Anachip Corp |
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AF9478PD Datasheet(HTML) 2 Page - Anachip Corp |
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2 / 5 page  AF9478P P-Channel Enhancement Mode Power MOSFET Anachip Corp. www.anachip.com.tw Rev. 1.0 Sep 6, 2005 2/5 Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage -60 V VGS Gate-Source Voltage ±25 V TC=25ºC -10 ID Continuous Drain Current, VGS=10V TC=100ºC -6 A IDM Pulsed Drain Current (Note 1) 45 A Total Power Dissipation TC=25ºC 28 W PD Linear Derating Factor 0.23 W/ºC TSTG Storage Temperature Range -55 to 150 ºC TJ Operating Junction Temperature Range -55 to 150 ºC Thermal Data Symbol Parameter Maximum Units RθJC Thermal Resistance Junction-Case Max. 4.5 ºC/W RθJA Thermal Resistance Junction- Ambient Max. 110 ºC/W Electrical Characteristics (T J=25ºC unless otherwise noted) Limits Symbol Parameter Test Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -60 - - V ∆BVDSS/∆TJ Breakdown Voltage Temperature Coefficient Reference to 25ºC, ID=-1mA - -0.06 - V/ºC VGS=-10V, ID=-5A - - 160 RDS(ON) Static Drain-Source On-Resistance (Note 2) VGS=-4.5V, ID=-3A - - 200 mΩ VGS(th) Gate Threshold Voltage VDS= VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance VDS=-10V, ID=-5A - 6 - S Drain-Source Leakage Current(TJ=25ºC) VDS=-60V, VGS=0V - - -10 IDSS Drain-Source Leakage Current(TJ=150ºC) VDS=-48V, VGS=0V - - -25 uA IGSS Gate Source Leakage VGS=±25V - - ±100 nA Qg Total Gate Charge (Note 2) - 10 16 Qgs Gate-Source Charge - 2 - Qgd Gate-Drain (“Miller”) Charge ID=-5A VDS=-48V VGS=-4.5V - 4 - nC td(on) Turn-On Delay Time (Note 2) - 10 - tr Rise Time - 13 - td(off) Turn-Off Delay Time - 34 - tf Fall-Time VDS=-30V ID=-5A RG=3.3Ω, VGS=-10V RD=6Ω - 29 - nS Ciss Input Capacitance - 760 1220 Coss Output Capacitance - 80 - Crss Reverse Transfer Capacitance VGS=0V VDS=-25V, f=1.0MHz - 60 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Unit VSD Forward On Voltage (Note 2) IS=-5A, VGS=0V - - -1.2 V trr Reverse Recovery Time (Note 2) - 45 - ns Qrr Reverse Recovery Charge IS=-5A, VGS=0V, Dl/dt=-100A/µs - 107 - nC |
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