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5STP 03X6500
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1003-04 Sep. 01
page 2 of 5
On-state
ITAVM
Max. average on-state current
350 A
Half sine wave, TC = 70°C
ITRMS
Max. RMS on-state current
550 A
ITSM
Max. peak non-repetitive
4500 A
tp =
10 ms
Tj = 125°C
surge current
4850 A
tp =
8.3 ms
After surge:
I
2t
Limiting load integral
101 kA
2stp =
10 ms
VD = VR = 0V
98 kA
2stp =
8.3 ms
VT
On-state voltage
3.50 V
IT =
1000 A
VT0
Threshold voltage
1.20 V
IT =
300 - 900 A
Tj = 125°C
rT
Slope resistance
2.300 mΩ
IH
Holding current
30-80 mA
Tj = 25°C
15-60 mA
Tj = 125°C
IL
Latching current
80-500 mA
Tj = 25°C
50-200 mA
Tj = 125°C
Switching
di/dtcrit Critical rate of rise of on-state
100 A/µs Cont. f = 50 Hz VD ≤ 0.67⋅VDRM , Tj = 125°C
current
200 A/µs
ITRM = 1000 A
60 sec.
f = 50Hz
IFG = 2 A, tr = 0.5 µs
td
Delay time
≤
3.0 µs
VD = 0.4
⋅VDRM
IFG = 2 A, tr = 0.5 µs
tq
Turn-off time
≤
700 µs
VD
≤ 0.67⋅VDRM ITRM = 1000 A, Tj = 125°C
dvD/dt = 20V/µs VR > 200 V, diT/dt = 1 A/µs
Qrr
Recovery charge
min
900 µAs
max
2000 µAs
Triggering
VGT
Gate trigger voltage
2.6 V
Tj = 25°
IGT
Gate trigger current
400 mA
Tj = 25°
VGD
Gate non-trigger voltage
0.3 V
VD =0.4 x VDRM
IGD
Gate non-trigger current
10 mA
VD = 0.4 x VDRM
VFGM
Peak forward gate voltage
12 V
IFGM
Peak forward gate current
10 A
VRGM
Peak reverse gate voltage
10 V
PG
Gate power loss
3 W