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TM893GBK32 Datasheet(PDF) 8 Page - Texas Instruments |
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TM893GBK32 Datasheet(HTML) 8 Page - Texas Instruments |
8 / 12 page TM497FBK32, TM497FBK32S 4 194 304 BY 32-BIT TM893GBK32, TM893GBK32S 8 388 608 BY 32-BIT EXTENDED DATA OUT DYNAMIC RAM MODULES SMMS668 – NOVEMBER 1996 8 POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443 electrical characteristics over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted) PARAMETER TEST CONDITIONS† ’893GBK32-60 ’893GBK32-70 ’893GBK32-80 UNIT PARAMETER TEST CONDITIONS† MIN MAX MIN MAX MIN MAX UNIT VOH High-level output voltage IOH = – 5 mA 2.4 2.4 2.4 V VOL Low-level output voltage IOL = 4.2 mA 0.4 0.4 0.4 V II Input current (leakage) VCC = 5.5 V, VI = 0 V to 6.5 V, All others = 0 V to VCC ± 20 ± 20 ± 20 µA IO Output current (leakage) VCC = 5.5 V, VO = 0 V to VCC, CASx high ± 20 ± 20 ± 20 µA ICC1 Read- or write-cycle current (see Note 3) VCC = 5.5 V, Minimum cycle 896 816 736 mA ICC2 Standby current VIH = 2.4 V (TTL), After one memory cycle, RASx and CASx high 32 32 32 mA ICC2 Standby current VIH = VCC – 0.2 V (CMOS), After one memory cycle, RASx and CASx high 16 16 16 mA ICC3 Average refresh current (RAS only or CBR) (see Note 3) VCC = 5.5 V, RASx cycling, (RASx only); Minimum cycle CASx low (CBR) CASx high RASx low after 1760 1600 1440 mA ICC4 Average page current (see Note 4) VCC = 5.5 V, tPC = MIN, RASx low, CASx cycling 576 496 416 mA † For test conditions shown as MIN / MAX, use the appropriate value specified under recommended operating conditions. NOTES: 3. Measured with a maximum of one address change while RAS = VIL 4. Measured with a maximum of one address change while CAS = VIH capacitance over recommended ranges of supply voltage and operating free-air temperature, f = 1 MHz (see Note 5) PARAMETER TM497FBK32 TM893GBK32 UNIT PARAMETER MIN MAX MIN MAX UNIT Ci(A) Input capacitance, address inputs 50 80 pF Ci(R) Input capacitance, RAS inputs 33 28 pF Ci(C) Input capacitance, CAS inputs 17 28 pF Ci(W) Input capacitance, write-enable input 66 112 pF Co(DQ) Output capacitance on DQ pins 9 14 pF NOTE 5: VCC = 5 V ± 0.5 V, and the bias on pins under test is 0 V. |
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