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TM497FBK32S Datasheet(PDF) 8 Page - Texas Instruments

Part # TM497FBK32S
Description  EXTENDED DATA OUT DYNAMIC RAM MODULES
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

TM497FBK32S Datasheet(HTML) 8 Page - Texas Instruments

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TM497FBK32, TM497FBK32S 4 194 304 BY 32-BIT
TM893GBK32, TM893GBK32S 8 388 608 BY 32-BIT
EXTENDED DATA OUT DYNAMIC RAM MODULES
SMMS668 – NOVEMBER 1996
8
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
electrical characteristics over recommended ranges of supply voltage and operating free-air
temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS†
’893GBK32-60
’893GBK32-70
’893GBK32-80
UNIT
PARAMETER
TEST CONDITIONS†
MIN
MAX
MIN
MAX
MIN
MAX
UNIT
VOH High-level output voltage
IOH = – 5 mA
2.4
2.4
2.4
V
VOL
Low-level output voltage
IOL = 4.2 mA
0.4
0.4
0.4
V
II
Input current (leakage)
VCC = 5.5 V,
VI = 0 V to 6.5 V,
All others = 0 V to VCC
± 20
± 20
± 20
µA
IO
Output current (leakage)
VCC = 5.5 V,
VO = 0 V to VCC,
CASx high
± 20
± 20
± 20
µA
ICC1
Read- or write-cycle current
(see Note 3)
VCC = 5.5 V,
Minimum cycle
896
816
736
mA
ICC2 Standby current
VIH = 2.4 V (TTL),
After one memory cycle,
RASx and CASx high
32
32
32
mA
ICC2 Standby current
VIH = VCC – 0.2 V (CMOS),
After one memory cycle,
RASx and CASx high
16
16
16
mA
ICC3
Average refresh current
(RAS only or CBR)
(see Note 3)
VCC = 5.5 V,
RASx cycling,
(RASx only);
Minimum cycle
CASx low (CBR) CASx high
RASx low after
1760
1600
1440
mA
ICC4
Average page current
(see Note 4)
VCC = 5.5 V,
tPC = MIN,
RASx low,
CASx cycling
576
496
416
mA
† For test conditions shown as MIN / MAX, use the appropriate value specified under recommended operating conditions.
NOTES:
3. Measured with a maximum of one address change while RAS = VIL
4. Measured with a maximum of one address change while CAS = VIH
capacitance over recommended ranges of supply voltage and operating free-air temperature,
f = 1 MHz (see Note 5)
PARAMETER
TM497FBK32
TM893GBK32
UNIT
PARAMETER
MIN
MAX
MIN
MAX
UNIT
Ci(A)
Input capacitance, address inputs
50
80
pF
Ci(R)
Input capacitance, RAS inputs
33
28
pF
Ci(C)
Input capacitance, CAS inputs
17
28
pF
Ci(W)
Input capacitance, write-enable input
66
112
pF
Co(DQ) Output capacitance on DQ pins
9
14
pF
NOTE 5: VCC = 5 V ± 0.5 V, and the bias on pins under test is 0 V.


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