1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

General Purpose Transistors

PNP Silicon

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector – Emitter Voltage

VCEO

40

Vdc

Collector – Base Voltage

VCBO

40

Vdc

Emitter – Base Voltage

VEBO

5.0

Vdc

Collector Current — Continuous

IC

600

mAdc

Total Device Dissipation @ TA = 25°C

Derate above 25

°C

PD

625

5.0

mW

mW/

°C

Total Device Dissipation @ TC = 25°C

Derate above 25

°C

PD

1.5

12

Watt

mW/

°C

Operating and Storage Junction

Temperature Range

TJ, Tstg

– 55 to +150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Ambient

RqJA

200

°C/W

Thermal Resistance, Junction to Case

RqJC

83.3

°C/W

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector – Emitter Breakdown Voltage(1)

(IC = 1.0 mAdc, IB = 0)

V(BR)CEO

40

—

Vdc

Collector – Base Breakdown Voltage

(IC = 0.1 mAdc, IE = 0)

V(BR)CBO

40

—

Vdc

Emitter – Base Breakdown Voltage

(IE = 0.1 mAdc, IC = 0)

V(BR)EBO

5.0

—

Vdc

Base Cutoff Current

(VCE = 35 Vdc, VEB = 0.4 Vdc)

IBEV

—

0.1

µAdc

Collector Cutoff Current

(VCE = 35 Vdc, VEB = 0.4 Vdc)

ICEX

—

0.1

µAdc

1. Pulse Test: Pulse Width

≤ 300 ms, Duty Cycle ≤ 2.0%.

Preferred devices are Motorola recommended choices for future use and best overall value.

Order this document

by 2N4402/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

CASE 29–04, STYLE 1

TO–92 (TO–226AA)

1

2

3

2N4402

2N4403

*Motorola Preferred Device

*

COLLECTOR

3

2

BASE

1

EMITTER